Semiconductor IC Heat Conduction Layout for Temperature Balance
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Solution Overview
Problem
In semiconductor devices, there is a challenge in effectively managing heat dissipation between semiconductor ICs with different heat generation quantities, particularly where high-frequency signal control devices with varying thermal conductivity are involved, leading to potential temperature imbalances and operational risks.
Innovation Solution
The semiconductor device employs a configuration with first heat conduction members having lower thermal conductivity than the second heat conduction members, which have high thermal conductivity in the horizontal direction but lower in the vertical direction, to control heat transfer between ICs, using materials like graphite sheets or heat dissipation greases, and a heat dissipation member for external heat dispersal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat conduction members with high thermal conductivity are used for all semiconductor ICs, then heat dissipation efficiency is improved, but temperature imbalance occurs between ICs with different heat generation quantities
Solution Approach 1:
The patent applies local quality by assigning different thermal conductivity characteristics to heat conduction members based on the specific heat generation requirements of each semiconductor IC. High-heat-generation ICs receive heat conduction members with higher thermal conductivity, while low-heat-generation ICs receive those with lower thermal conductivity, ensuring each IC receives appropriate heat management tailored to its specific needs.
Solution Approach 2:
The patent changes the thermal conductivity parameter of heat conduction members to match the heat generation characteristics of different semiconductor ICs. By adjusting this key parameter, the system optimizes heat dissipation for each IC type, preventing both overheating of high-power ICs and temperature imbalance affecting low-power ICs.
2Reliability
If heat conduction members with low thermal conductivity are used, then temperature balance between ICs is improved, but heat dissipation efficiency decreases
Solution Approach 1:
The patent implements local quality by creating spatial variation in thermal conductivity properties across different locations in the package. Each heat conduction member's thermal properties are locally optimized according to the specific heat generation characteristics of the semiconductor IC it serves, rather than using a uniform material throughout.
Solution Approach 2:
The patent modifies the thermal conductivity parameter of heat conduction members to create a gradient or stepped distribution matching the heat generation profile of different ICs. This parameter variation ensures that each IC operates within its optimal temperature range while maintaining overall system reliability.
3Ease of manufacture
If uniform heat conduction members are used for all ICs, then manufacturing simplicity is maintained, but excessive heat transfer occurs from high heat generation ICs to low heat generation ICs
Solution Approach 1:
The patent applies local quality by differentiating heat conduction member properties according to location and function. Instead of uniform materials, each heat conduction member is selected or designed with specific thermal conductivity characteristics appropriate for its associated semiconductor IC's heat generation profile.
Solution Approach 2:
The patent uses heat conduction members as intermediary elements that mediate heat transfer between semiconductor ICs and the heat dissipation plate. By carefully selecting the thermal conductivity of these intermediaries, the system controls and regulates heat flow paths, preventing excessive heat transfer from high-power to low-power ICs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses excessive heat transfer from high heat generation ICs to lower heat generation ICs, preventing temperature rises beyond their thermal limits and reducing the risk of abnormal operations.
Implementation Method 1
a first heat conduction member disposed at an upper layer of at least a portion of the first semiconductor IC
Implementation Method 2
a second heat conduction member disposed at an upper layer of the second semiconductor IC and surrounding the first heat conduction member
Implementation Method 3
a heat dissipation member disposed along a horizontal direction at an upper layer of the second heat conduction member
Data Source
AI summary
The semiconductor device includes a first semiconductor IC, a second semiconductor IC with a smaller heat generation quantity than the first semiconductor IC, a first heat conduction member covering at least a portion of the first semiconductor IC, a second heat conduction member covering the second semiconductor IC and the first heat conduction member, and a heat dissipation member. The heat dissipation member covers the second heat conduction member and dissipates heat produced from the first semiconductor IC and second semiconductor IC to the exterior. A thermal conductivity of the first heat conduction member is lower than a thermal conductivity of the second heat conduction member in a horizontal direction, which is a direction in which the first semiconductor IC and the second semiconductor IC are arrayed.