IC Insulating Structure With High Thermal Conductivity for Heat Dissipation
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Solution Overview
Problem
The generation of excess heat in integrated circuits due to low thermal conductivity of dielectric materials used in dielectric layers, which can negatively impact performance and physical integrity.
Innovation Solution
Incorporation of high thermal conductivity electrically insulating structures, such as diamond, aluminum nitride, or silicon carbide, to facilitate heat dissipation through a thermal collection network by connecting electrically conductive structures and providing additional thermal pathways.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional dielectric materials are used in dielectric layers, then electrical insulation is provided, but thermal conductivity is low causing excess heat generation
Solution Approach 1:
The patent uses diamond, aluminum nitride, or silicon carbide as electrically insulating structures within dielectric layers. These materials form a composite structure where the high thermal conductivity material (diamond/aluminum nitride/silicon carbide) is integrated into the dielectric layer, creating a composite that simultaneously provides electrical insulation and enhanced thermal conductivity to dissipate heat effectively.
2Temperature
If high thermal conductivity materials are introduced to improve heat dissipation, then thermal management is enhanced, but device complexity increases
Solution Approach 1:
The electrically insulating structures serve multiple functions simultaneously: they provide electrical insulation between conductive layers and act as thermal pathways for heat dissipation. This multi-functionality reduces device complexity because a single structural element addresses both electrical and thermal requirements, eliminating the need for separate insulation and heat management components.
Solution Approach 2:
The patent changes the thermal conductivity parameter of the dielectric layer by incorporating materials with high thermal conductivity (diamond: 1000-2000 W/mK, aluminum nitride: 150-200 W/mK, silicon carbide: 120-200 W/mK) while maintaining electrical insulation properties. This parameter change enables effective heat dissipation through the dielectric layer without adding complex thermal management structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation and operational characteristics, leading to improved performance and extended lifetime of integrated circuits by effectively distributing thermal energy away from the device substrate.
Implementation Method 1
at least one electrically insulating structure disposed over the substrate and directly contacting each of the plurality of electrically conductive structures. The at least one electrically insulating structure has a thermal conductivity greater than five watts per meter-Kelvin (W/m-K)
Data Source
AI summary
Some embodiments relate to an integrated circuit (IC) device including a substrate, a plurality of electrically conductive structures disposed over the substrate and separated from each other, and at least one electrically insulating structure disposed over the substrate and directly contacting each of the plurality of electrically conductive structures. The at least one electrically insulating structure has a thermal conductivity greater than five watts per meter-Kelvin (W/m-K).