IC Interconnect Structure With Metal-Free Fault Detection Regions

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Solution Overview

Problem

The increasing complexity of manufacturing integrated circuit (IC) chips due to scaling down has made fault detection challenging, particularly due to signal blockage by metal elements in interconnect structures, which hampers real-time fault detection and increases manufacturing costs.

Innovation Solution

Incorporation of metal-free regions in the front-side interconnect structures of IC chips, where fault detection lines are integrated to reduce signal propagation path length and volume area, allowing for efficient fault detection by detectors placed outside the chip.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal elements are used in interconnect structures to ensure electrical connectivity, then electrical conductivity is improved, but signal blockage occurs that hampers fault detection

Engineering Contradiction:
Improveelectrical conductivityVSAvoidfault detection capability
Core Design Contradiction:
ReliabilityVSDifficulty of detecting and measuring

Solution Approach 1:

The interconnect structure is segmented into metal-containing regions (for electrical connectivity) and metal-free regions (for fault detection). This segmentation allows different functional requirements to be met in different spatial zones of the same interconnect structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the interconnect structure have different metal content: metal elements are present in regions requiring electrical connectivity, while metal-free regions are created specifically for fault detection purposes. This local variation in material composition resolves the contradiction between conductivity and detectability.

Inventive Principle:
Principle #3Local quality

2Productivity

If scaling down of semiconductor devices is continued to increase storage capacity and processing speed, then performance is improved, but manufacturing complexity and fault detection difficulty increase

Engineering Contradiction:
Improvestorage capacity and processing speedVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The interconnect structure is divided into functional zones with different metal content, allowing standard scaling practices to continue in metal regions while incorporating fault detection capabilities in metal-free zones, thereby managing complexity without sacrificing productivity gains.

Inventive Principle:
Principle #1Segmentation

3Measurement precision

If metal-free regions are created in interconnect structures to enable fault detection, then fault detection accuracy is improved, but manufacturing process complexity increases

Engineering Contradiction:
Improvefault detection accuracyVSAvoidmanufacturing process simplicity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

Metal-free regions are formed during the interconnect manufacturing process itself, before final assembly and testing. This preliminary creation of detection zones integrates fault detection capability into the manufacturing flow without requiring separate complex post-processing steps.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250355041A1Interconnect structures in integrated circuit chips
Publication Date: 2025.11.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250355041A1 patent drawing
  • US20250355041A1 patent drawing
  • US20250355041A1 patent drawing

AI summary

An integrated circuit (IC) chip package and a method of fabricating the same are disclosed. The IC chip package includes a device layer on a first surface of a substrate, a first interconnect structure on the device layer, and a second interconnect structure on the second surface of the substrate. The first interconnect structure includes a fault detection line in a first metal line layer and configured to emit an electrical or an optical signal that is indicative of a presence or an absence of a defect in the device layer, a metal-free region on the fault detection line, and a metal line adjacent to the fault detection line in the first metal line layer. The fault detection line is electrically connected to the device layer.