Integrated Circuit Layout With Insulation Barrier Under Source/Drain
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Solution Overview
Problem
The challenge in the development of integrated circuit devices is to enhance both the degree of integration and reliability, particularly in the context of down-scaling semiconductor devices where accuracy and speed are critical.
Innovation Solution
The proposed solution involves an integrated circuit device design that includes multiple device isolation layers, gap-fill insulation layers, gate structures, source/drain regions, insulation blocks, and lower contacts, arranged in a specific configuration to optimize device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device down-scaling is performed to increase integration density, then the degree of integration is improved, but manufacturing precision and reliability deteriorate due to increased difficulty in controlling device characteristics
Solution Approach 1:
The device is divided into multiple fins extending in the first horizontal direction, with each fin acting as an independent current path. This segmentation allows the total current to be distributed across multiple smaller structures, making it easier to control the overall device characteristics while maintaining high integration density. The isolation structures between fins further enable independent control of each segment's electrical properties.
Solution Approach 2:
The invention transitions from a planar device structure to a three-dimensional fin structure extending in the first horizontal direction. This dimensional change increases the effective channel area without proportionally increasing the footprint, thereby improving integration density while maintaining controllable device characteristics through the vertical fin geometry.
2Productivity
If device down-scaling is performed to increase integration density, then the degree of integration is improved, but reliability deteriorates due to increased difficulty in maintaining operation accuracy
Solution Approach 1:
By segmenting the device into multiple fins with isolation structures, the invention creates multiple independent current paths. This segmentation provides redundancy and stability to the device operation, as the failure or variation in one fin does not directly affect others, thereby improving reliability while maintaining high integration.
Solution Approach 2:
The isolation structures are selectively positioned between adjacent fins to create different local electrical environments. This local quality control allows for optimized current distribution and electrical characteristics in different regions of the device, enhancing operation accuracy and reliability in the down-scaled integrated structure.
3Reliability
If multiple isolation structures are added to control device characteristics, then reliability is improved, but device complexity increases
Solution Approach 1:
The invention merges multiple functions into the isolation structures: they provide electrical isolation between fins, define fin boundaries, control current paths, and maintain structural integrity. This consolidation of functions reduces the need for separate components, thereby improving reliability without proportionally increasing device complexity.
Solution Approach 2:
The isolation structures serve multiple purposes simultaneously: electrical isolation, structural definition, current path control, and mechanical support. This multi-functionality allows the device to achieve high reliability through comprehensive control of device characteristics without adding excessive structural complexity.
Data Source
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Figure 2B
AI summary
An integrated circuit device includes a plurality of device isolation layers (114) extending lengthwise in a first horizontal direction (X), a plurality of gap-fill insulation layers (222) arranged apart from one another in a second horizontal direction (Y), a plurality of gate structures (162) extending lengthwise in the second horizontal direction (Y) perpendicular to the first horizontal direction (X) and on the plurality of gap-fill insulation layers (222), a first source/drain region (130a) and a second source/drain region (130b) respectively disposed at both sides of a first gate structure (162) among the plurality of gate structures (162) with respect to the first horizontal direction (X), an insulation block (212) under the first source/drain region (130a), and an insulation barrier (124) between the first source/drain region (130a) and the insulation block (212). The insulation barrier (124) covers a lower surface of the first source/drain region (130a).