IC Layout Jumper Routing to Mitigate Gate Antenna Effect
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Solution Overview
Problem
The antenna effect in semiconductor devices can lead to adverse yield and reliability issues during manufacturing, which current solutions like wire jogging attempt to address by limiting metal segment length and changing routing layer order, but these methods increase device run-time and consume more routing resources, hindering performance.
Innovation Solution
The introduction of a jumper in the semiconductor device layout allows the gate electrode to connect directly to a higher metal layer, reducing wire length and avoiding the antenna effect without additional routing resources by restricting the length of conductive segments connected to the gate and inserting jumpers between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If wire jogging is used to fix antenna effect by limiting metal segment length and changing routing layer order, then antenna effect is reduced, but device run-time increases and routing resources are consumed
Solution Approach 1:
The conductive segment connected to the gate is divided into two separate segments: a first conductive segment in a lower metal layer and a second conductive segment in a higher metal layer. These segments are electrically connected through a via structure, effectively segmenting the original single conductive path into multiple parts across different metal layers.
Solution Approach 2:
The invention transitions from a two-dimensional routing approach (single metal layer) to a three-dimensional approach by utilizing vertical vias to connect conductive segments across multiple metal layers. This adds the vertical dimension to the routing structure, allowing the gate to connect to higher metal layers without increasing horizontal wire length.
2Object-affected harmful factors
If wire jogging is used to fix antenna effect by limiting metal segment length and changing routing layer order, then antenna effect is reduced, but routing resources are consumed
Solution Approach 1:
The conductive segment connected to the gate is divided into two separate segments: a first conductive segment in a lower metal layer and a second conductive segment in a higher metal layer. These segments are electrically connected through a via structure, effectively segmenting the original single conductive path into multiple parts across different metal layers.
Solution Approach 2:
The invention transitions from a two-dimensional routing approach (single metal layer) to a three-dimensional approach by utilizing vertical vias to connect conductive segments across multiple metal layers. This adds the vertical dimension to the routing structure, allowing the gate to connect to higher metal layers without increasing horizontal wire length.
3Device complexity
If conventional routing is used without jumpers, then routing resources are saved, but antenna effect cannot be effectively fixed
Solution Approach 1:
The conductive segment connected to the gate is divided into two separate segments: a first conductive segment in a lower metal layer and a second conductive segment in a higher metal layer. These segments are electrically connected through a via structure, effectively segmenting the original single conductive path into multiple parts across different metal layers.
Solution Approach 2:
The invention transitions from a two-dimensional routing approach (single metal layer) to a three-dimensional approach by utilizing vertical vias to connect conductive segments across multiple metal layers. This adds the vertical dimension to the routing structure, allowing the gate to connect to higher metal layers without increasing horizontal wire length.
Data Source
AI summary
The present disclosure provides methods for generating an integrated circuit (IC) layout and a semiconductor device. The method includes providing an active region in a first layer of the IC layout, disposing a gate on the active area in a second layer extending in a first direction, disposing a first conductive segment on the active area in a third layer extending in a second direction perpendicular to the first direction, and disposing a second conductive segment on the first conductive segment in a fourth layer extending in the second direction. The second conductive segment electrically connects to the first conductive segment, and a width of the first conductive segment is different than a width of the second conductive segment.