Integrated Circuit Layout With Segmented Gates for Compact Long Channels

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Solution Overview

Problem

As integrated circuits become smaller, there is a need to further reduce the area occupied by the circuits while maintaining or improving performance, particularly in terms of transistor channel length and circuit density.

Innovation Solution

The solution involves designing integrated circuits with transistors that have gates with varying lengths, where the effective gate length can be multiple times the critical dimension of the technology node, allowing for a more flexible and efficient layout.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the area of the layout is decreased by substituting new structures and reducing distance between circuit elements, then the overall area occupied by the integrated circuit is reduced, but the manufacturing precision and reliability may be compromised due to tighter spacing and smaller features

Engineering Contradiction:
Improvelayout areaVSAvoidfeature size precision
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The gate is divided into multiple gate segments (first gate segment, second gate segment, third gate segment) with different lengths. This segmentation allows each segment to be independently sized and positioned, enabling the circuit to achieve compact area while maintaining adequate manufacturing precision for each individual segment. The segmented structure resolves the contradiction by allowing different parts of the gate to have different dimensions optimized for their specific functions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different gate segments are assigned different lengths based on their specific functional requirements. The first gate segment has a first length, the second gate segment has a second length, and the third gate segment has a third length. This local differentiation allows the circuit to maintain high manufacturing precision where needed while reducing overall area, as each segment is optimized for its local function rather than requiring uniform dimensions throughout.

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If the distance between circuit elements is reduced to decrease layout area, then the area efficiency is improved, but the circuit reliability and performance may deteriorate due to increased interference and reduced signal integrity

Engineering Contradiction:
Improvelayout areaVSAvoidcircuit reliability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The gate is divided into multiple gate segments (first gate segment, second gate segment, third gate segment) with different lengths. This segmentation allows each segment to be independently sized and positioned, enabling the circuit to achieve compact area while maintaining adequate manufacturing precision for each individual segment. The segmented structure resolves the contradiction by allowing different parts of the gate to have different dimensions optimized for their specific functions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different gate segments are assigned different lengths based on their specific functional requirements. The first gate segment has a first length, the second gate segment has a second length, and the third gate segment has a third length. This local differentiation allows the circuit to maintain high manufacturing precision where needed while reducing overall area, as each segment is optimized for its local function rather than requiring uniform dimensions throughout.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12230632B2Integrated circuit layout and method thereof
Publication Date: 2025.02.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12230632B2 patent drawing
  • US12230632B2 patent drawing
  • US12230632B2 patent drawing

AI summary

An integrated circuit (IC) structure includes a first transistor and a second transistor. The first transistor includes a first active region and a first gate disposed on the first active region, in which the first gate has a first effective gate length along a first direction parallel to a lengthwise direction of the first active region. The second transistor includes a second active region and a second gate disposed on the second active region, and includes a plurality of gate structures arranged along the first direction and separated from each other, in which the second gate has a second effective gate length along the first direction, the second effective gate length is n times the first effective gate length, and n is a positive integer greater than 1.