IC Layout Staggered Active Regions PODE Removal
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Solution Overview
Problem
The semiconductor industry faces challenges in designing integrated circuits with high device density and performance while managing power consumption, particularly with the integration of FinFET devices, where the presence of PODE structures on gate electrodes can affect device performance and power consumption.
Innovation Solution
The solution involves configuring integrated circuit layouts by abutting cells with active regions staggered in a one-by-one configuration and cells with active regions arranged in groups, allowing for the reduction of PODE structures on gate electrodes, which reduces power consumption and enhances device performance, and utilizing conductive dummy gate electrodes for interconnection to minimize metal lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If cells with active regions staggered in a one-by-one configuration are abutted with cells with active regions arranged in groups, then device density is improved, but PODE structures on gate electrodes affect power consumption and device performance
Solution Approach 1:
The patent extracts and removes PODE (partially overlapping dummy electrode) structures from gate electrodes in high-density cell configurations. By identifying and eliminating these unnecessary conductive structures that cause harmful overlap effects, the invention reduces power consumption while maintaining the high device density achieved through staggered and grouped active region arrangements.
Solution Approach 2:
The patent applies different cell configuration strategies to different regions of the integrated circuit. Some cells use staggered active region arrangements while others use grouped arrangements, allowing local optimization of both density and power characteristics based on specific circuit requirements and interconnection needs.
2Quantity of substance
If cells with active regions staggered in a one-by-one configuration are abutted with cells with active regions arranged in groups, then device density is improved, but device performance is affected by PODE structures
Solution Approach 1:
The patent removes PODE structures from gate electrodes to eliminate their harmful effects on device performance. These partially overlapping dummy electrodes create electrical interference and performance degradation, particularly in high-density configurations. By extracting these structures, the invention preserves the benefits of high device density while restoring optimal device performance and reliability.
3Device complexity
If conductive dummy gate electrodes are used for interconnection, then metal lines are minimized, but device complexity increases
Solution Approach 1:
The patent makes gate electrodes serve multiple functions: their primary function of controlling transistor operation plus an additional function as interconnection conductors. By configuring gate electrodes to act as dummy gate electrodes for interconnection purposes, the invention eliminates the need for separate metal lines in certain interconnection scenarios, thereby simplifying the overall manufacturing process despite the increased design complexity.
Data Source
AI summary
An integrated circuit includes at least one first active region, at least one second active region adjacent to the first active region, and a plurality of third active regions. The first active region and the second active region are staggered. The third active regions are present adjacent to the first active region, wherein the third active regions are substantially aligned with each other.