Integrated Circuit Device Metal Contamination Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of integrated circuit devices leads to increased contamination by metal particles during manufacturing, which reduces performance and yield, and degrades electrical characteristics and reliability.
Innovation Solution
A method involving a substrate with separated regions, an interface device isolation layer, and an insulation pattern that covers the active areas and defines an undercut area, which is filled with a buried pattern to prevent metal contamination sources from remaining in the interface region, thereby reducing contamination and enhancing the reliability and yield of the integrated circuit device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integrated circuit devices are miniaturized to increase density, then device integration is improved, but contamination by metal particles increases
Solution Approach 1:
The patent extracts and removes potential metal contamination sources from the manufacturing process. Specifically, it eliminates metal-containing layers and processes that could generate metal particles, thereby preventing contamination while maintaining device miniaturization and integration density.
Solution Approach 2:
The patent converts the potential harm of metal contamination into a benefit by implementing a manufacturing process that proactively prevents contamination. The process design ensures that no metal particles are generated in the first place, turning the contamination risk into an opportunity for cleaner manufacturing and higher yield.
2Manufacturing precision
If process tolerance is reduced due to increased pattern minuteness, then manufacturing precision is improved, but contamination sources remain and reduce yield
Solution Approach 1:
The patent removes metal contamination sources from the manufacturing process, eliminating the factor that would otherwise reduce yield despite improved manufacturing precision. By extracting the contamination source, the full benefit of precise pattern formation can be realized without yield loss.
Solution Approach 2:
The patent implements preliminary measures to prevent contamination before it can affect the manufacturing process. By designing a contamination-free process from the outset, the patent ensures that improved manufacturing precision translates directly into higher yield without being compromised by metal particle contamination.
3Volume of moving object
If device size is reduced, then compactness is improved, but electrical performance and reliability degrade due to contamination
Solution Approach 1:
The patent extracts and eliminates metal contamination sources that would otherwise degrade electrical performance and reliability in miniaturized devices. By removing the contamination factor, the patent enables devices to maintain high reliability despite reduced size.
Solution Approach 2:
The patent converts the potential harm of contamination in miniaturized devices into a benefit by implementing a contamination-free manufacturing process. This allows the full electrical performance and reliability benefits of device miniaturization to be realized without degradation from metal particle contamination.
Data Source
AI summary
An integrated circuit device includes a substrate having a first region and a second region separated from each other along a direction parallel to an upper surface of the substrate. An interface device isolation layer fills an interface trench in an interface region between the first region and the second region and defines a portion of a first active area positioned in the first region and a portion of a second active area positioned in the second region. An insulation pattern extends from the first region to an upper portion of the interface device isolation layer. The insulation pattern covers the first active area and at least a portion of the interface device isolation layer. The insulation pattern defines an undercut area on an upper surface of the interface device isolation layer. A buried pattern substantially fills the undercut region.