IC Metal Structure Layout Without MD Routing Segments

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Solution Overview

Problem

Existing integrated circuit (IC) designs face challenges in reducing costs and increasing routing flexibility due to the use of metal-like defined (MD) segments, which limit the efficiency and scalability of electrical connections.

Innovation Solution

Incorporating a first metal segment aligned with gate structures, perpendicular second and third metal segments, and self-aligned contact (SAC) via structures to create electrical paths that do not include MD segments, thereby enhancing routing flexibility and reducing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If metal-like defined (MD) segments are used in IC designs, then routing flexibility is reduced and costs increase, but design rules and manufacturing specifications are maintained

Engineering Contradiction:
Improverouting flexibilityVSAvoidmanufacturing cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent extracts and removes the problematic MD segments from the electrical connection path. By eliminating these rigidly defined metal segments, the design allows for more flexible routing options while reducing manufacturing complexity and costs associated with precise MD segment placement and alignment.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of using rigidly defined metal segments to create electrical connections, the patent inverts the approach by using self-aligned contact via structures that automatically align with gate structures. This inversion of the conventional approach eliminates the need for MD segments and their associated manufacturing constraints.

Inventive Principle:
Principle #13The other way round (Inversion)

2Manufacturing precision

If MD segments are used for electrical connections, then manufacturing precision requirements increase, but connection reliability is maintained

Engineering Contradiction:
Improvealignment precisionVSAvoidconnection reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The self-aligned contact via structures serve themselves by automatically aligning with the gate structures during the manufacturing process. This self-alignment mechanism eliminates the need for high-precision external alignment processes, reducing manufacturing precision requirements while maintaining connection reliability through the inherent alignment capability of the structure.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The contact via structures are formed in advance to be self-aligned with the gate structures, performing the alignment function beforehand. This preliminary action of creating self-aligned structures eliminates the need for subsequent high-precision alignment operations, reducing manufacturing complexity while ensuring reliable connections.

Inventive Principle:
Principle #10Preliminary action

3Adaptability or versatility

If first metal segment aligned with gate structures is incorporated, then routing flexibility improves, but device complexity increases

Engineering Contradiction:
Improverouting flexibilityVSAvoidstructure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the first metal segment with the gate structures by aligning them, creating a unified structure that provides routing flexibility without adding separate, complex components. This merging approach allows the metal segment to serve dual purposes as both a structural element and a routing element, improving flexibility while minimizing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20250357346A1Method of manufacturing integrated circuit structure including first metal structure
Publication Date: 2025.11.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250357346A1 patent drawing
  • US20250357346A1 patent drawing
  • US20250357346A1 patent drawing

AI summary

A method of manufacturing an IC structure includes: forming first and second active areas; forming first and second gate structures overlying the first and second active areas; forming a first source/drain via structure on a first portion of the first active area between the first and second gate structures; forming a second source/drain via structure on a first portion of the second active area extending beyond the first and second gate structures; forming a first metal segment in a first metal layer, contacting the first source/drain via structure, and overlying the second active area; and forming a second metal segment in a second metal layer and electrically connecting the first portion of the first active area to the first portion of the second active area, the first and second metal segments being electrically isolated from a second portion of the second active area between the first and second gate structures.