Integrated Circuit Metal Wiring Complex Capping Layer Electromigration

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Solution Overview

Problem

As integrated circuit devices are downscaled, they face challenges with increasing resistance and current leakage in metal wiring layers, leading to electromigration issues that affect their reliability and lifespan.

Innovation Solution

The integration of a complex capping layer comprising a conductive alloy layer with a semiconductor element and a second metal, along with an insulating capping layer, is used to cover the metal wiring layers, suppressing resistance increases and current leakage, and mitigating electromigration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If metal wiring layers are downscaled to reduce line widths and pitches, then device integration density is improved, but resistance increases and current leakage worsens

Engineering Contradiction:

Improveline widthVSAvoidresistance

Core Design Contradiction:

Area of moving objectVSReliability

Solution Approach 1:

The patent applies composite materials by forming a multi-layer capping structure comprising a first capping layer (e.g., TiN, TaN, or WN) and a second capping layer (e.g., SiO2, Si3N4, or SiOC). This composite capping structure suppresses resistance increase and current leakage in downscaled metal wiring layers by providing both conductive protection and insulating barriers, thereby maintaining reliability despite reduced line widths and pitches

Inventive Principle:

Principle #40Composite materials

2Area of moving object

If metal wiring layers are downscaled to reduce line widths and pitches, then device integration density is improved, but current leakage increases

Engineering Contradiction:

Improveline widthVSAvoidcurrent leakage

Core Design Contradiction:

Area of moving objectVSObject-generated harmful factors

Solution Approach 1:

The patent uses composite materials through a multi-layer capping structure where the first capping layer (conductive barrier material) and second capping layer (insulating material) work together to suppress current leakage. The conductive barrier layer prevents metal diffusion while the insulating layer provides electrical isolation, effectively reducing harmful current leakage in downscaled wiring

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The capping layers serve as intermediary structures between the metal wiring layer and the surrounding environment. The first capping layer (conductive barrier) and second capping layer (insulating) act as mediators that prevent direct exposure of the metal wiring to contaminants and electric fields, thereby suppressing current leakage without requiring further downsizing

Inventive Principle:

Principle #24Intermediary (Mediator)

3Area of moving object

If metal wiring layers are downscaled, then device integration density is improved, but electromigration worsens

Engineering Contradiction:

Improveline widthVSAvoidelectromigration

Core Design Contradiction:

Area of moving objectVSReliability

Solution Approach 1:

The patent applies composite materials through a multi-layer capping structure comprising a conductive barrier layer (TiN, TaN, or WN) and an insulating layer (SiO2, Si3N4, or SiOC). This composite structure suppresses electromigration in downscaled metal wiring layers by providing both mechanical protection and electrical isolation, thereby maintaining reliability despite reduced dimensions

Inventive Principle:

Principle #40Composite materials

4Reliability

If a complex multi-layer capping structure is formed, then resistance increase and current leakage are suppressed, but device complexity increases

Engineering Contradiction:

ImproveresistanceVSAvoidcapping layer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the capping structure into multiple functional layers: a first capping layer (conductive barrier material) and a second capping layer (insulating material). Each layer performs a specific function—the conductive barrier layer suppresses resistance increase through its material properties, while the insulating layer suppresses current leakage through electrical isolation. This segmented approach allows targeted suppression of different failure mechanisms while maintaining overall reliability

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS11600569B2Integrated circuit device and method of manufacturing the same

Publication Date: 2023.03.07 SAMSUNG ELECTRONICS CO LTD

AI summary

An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.