Integrated Circuit Device With Localized Oxygen Content Modulation
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Solution Overview
Problem
In the development of down-scaled semiconductor devices, there is a need for optimized transistor structures that achieve high operation speeds and accuracy, which existing technologies have not adequately addressed in terms of threshold voltage modulation and oxygen vacancy control.
Innovation Solution
The integration of a metal-oxide-semiconductor (MOS) integrated circuit device with distinct oxygen vacancy densities and oxygen contents in high dielectric layers and work function adjustment metal structures across different active areas of the substrate, allowing for precise control of threshold voltages and improved transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If existing transistor structures are used in down-scaled semiconductor devices, then device scaling is achieved, but threshold voltage modulation and operation accuracy are insufficient
Solution Approach 1:
The patent applies local quality by creating different oxygen content regions within the high dielectric layer and work function adjustment metal containing structure. Specifically, the high dielectric layer has a first oxygen content in a first region and a second oxygen content in a second region, while the work function adjustment metal containing structure has a third oxygen content in a third region and a fourth oxygen content in a fourth region. This spatial variation in oxygen content enables precise local control of threshold voltage across different active areas, resolving the contradiction between device scaling and threshold voltage modulation accuracy.
Solution Approach 2:
The patent utilizes parameter changes by varying the oxygen content as a key physical parameter to control the electrical properties of the transistor. By adjusting oxygen content in different regions (first, second, third, and fourth oxygen contents), the threshold voltage can be modulated across a wide range. This parameter-based control mechanism enables accurate threshold voltage setting in scaled devices without compromising manufacturing precision.
2Ease of manufacture
If uniform oxygen content is used in high dielectric layers and work function adjustment metal structures, then manufacturing simplicity is maintained, but threshold voltage modulation range is limited
Solution Approach 1:
The patent segments the high dielectric layer and work function adjustment metal containing structure into distinct regions with different oxygen contents. The high dielectric layer is divided into a first region and a second region, while the work function adjustment metal containing structure is divided into a third region and a fourth region. Each segment can be independently controlled to achieve the desired threshold voltage, providing both manufacturing feasibility through region-specific processing and wide threshold voltage modulation range through varied oxygen contents.
Solution Approach 2:
By implementing local quality variations in oxygen content across different regions, the patent achieves precise threshold voltage control while maintaining manufacturing simplicity. The selective oxygenation or deoxygenation of specific regions allows for tailored transistor characteristics without requiring complete process redesign, thus balancing ease of manufacture with adaptability.
3Speed
If high operation speeds are achieved through down-scaling, then device performance improves, but operation accuracy and threshold voltage control deteriorate
Solution Approach 1:
The patent employs parameter changes in oxygen content to maintain accurate threshold voltage control in down-scaled devices. By precisely controlling the oxygen content in the high dielectric layer and work function adjustment metal containing structure across different regions, the threshold voltage can be accurately set even as device dimensions are reduced to achieve higher operation speeds. This parameter-based control compensates for the challenges introduced by scaling.
Solution Approach 2:
Local quality variations in oxygen content enable accurate threshold voltage control in specific active areas, ensuring operation accuracy is maintained despite device down-scaling. The region-specific oxygen content control allows each transistor to be precisely tuned for its intended function, preserving measurement precision and threshold voltage accuracy in high-speed devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective threshold voltage modulation across a wide range, enhancing the reproducibility and accuracy of transistor performance, thereby meeting the demands for high-speed and high-reliability operations in semiconductor devices.
Implementation Method 1
a first high dielectric layer formed on a first active area of a substrate and having a first oxygen vacancy density, and a first work function adjustment metal containing structure formed on the first high dielectric layer and comprising a first conductive layer having a first oxygen content
Data Source
AI summary
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.