IC Package Crack Stopper Structure for Gap Fill Stress Relief
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Solution Overview
Problem
Gap fill materials used in semiconductor packaging are prone to cracking due to thermal and mechanical stresses, which can damage integrated circuit dies and induce process failures, leading to reduced performance or contamination.
Innovation Solution
A crack stopper structure comprising multiple layers of dielectric materials is provided to envelop the integrated circuit die before gap fill material deposition, acting as a stress relief point to prevent crack propagation and protect the die from damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If gap fill material is deposited to fill spaces between integrated circuit dies, then packaging density is improved, but cracks propagate through the material causing die damage and process failures
Solution Approach 1:
A crack stopper structure is formed over the integrated circuit die before gap fill material deposition. This preliminary protective layer prevents cracks from propagating into the die during subsequent gap fill material deposition and curing processes, thereby maintaining die integrity while enabling high packaging density
Solution Approach 2:
The crack stopper structure acts as an intermediary protective barrier between the gap fill material and the integrated circuit die. It absorbs and redirects crack stresses away from the die, preventing direct damage while allowing the gap fill material to provide necessary structural support and high packaging density
2Strength
If gap fill material is used to encapsulate dies, then mechanical support is improved, but thermal and mechanical stresses cause cracking and contamination
Solution Approach 1:
The crack stopper structure is deposited beforehand to cushion and absorb thermal and mechanical stresses that will occur during gap fill material curing and subsequent processing. This protective layer prevents stress-induced cracking and contamination of the integrated circuit die while maintaining the mechanical support provided by the gap fill material
3Quantity of substance
If smaller feature sizes are used to increase integration density, then component integration is improved, but packaging complexity and stress concentration increase
Solution Approach 1:
The crack stopper structure provides localized protection specifically at critical stress points around the integrated circuit die edges where crack propagation is most likely to occur. This targeted approach addresses packaging complexity and stress concentration issues without requiring changes to the overall high-density integration design
Data Source
AI summary
Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.


