IC Package Bonding Layer Layout for CTE Mismatch Delamination

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving reliable bonding integrity between upper and lower integrated circuit dies due to coefficient of thermal expansion (CTE) mismatch between the dies and the encapsulant, which can lead to delamination during manufacturing and operation.

Innovation Solution

The implementation of dummy die connectors over interfaces between lower integrated circuit dies and the lower gap-fill layer helps to mitigate the effects of CTE mismatch, ensuring better bonding integrity between upper and lower dies by eliminating or reducing the risk of delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If dummy die connectors are placed over interfaces between lower integrated circuit dies and lower gap-fill layer, then bonding integrity between upper and lower dies is improved, but device complexity increases

Engineering Contradiction:
Improvebonding integrityVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Dummy die connectors serve as intermediary structures placed at the interfaces between lower integrated circuit dies and lower gap-fill layer. These dummy connectors act as mediators that distribute and mitigate the stress caused by CTE mismatch, preventing delamination of upper dies while maintaining bonding integrity. The dummy connectors are electrically isolated but structurally essential for stress management in the package.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Stability of the object's composition

If dummy die connectors are added to mitigate CTE mismatch effects, then manufacturing stability is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvemanufacturing stabilityVSAvoidconnector placement precision
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

Dummy die connectors are formed during the manufacturing process before final assembly, allowing their positions to be pre-established at critical interfaces. This preliminary action ensures that the stress-mitigating structures are in place before upper dies are bonded, improving manufacturing stability. The connectors are formed as part of the bonding layer structure, integrating their placement into existing process steps.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the reliability of the integrated circuit package by reducing the impact of CTE mismatch, thereby improving the manufacturing and operational stability of the package.

Implementation Method 1

By forming the dummy die connectors directly over interfaces between the lower integrated circuit dies and the lower gap-fill layer, the effect of the coefficient of thermal expansion (CTE) mismatch between the lower integrated circuit dies and the lower gap-fill layer on the bonding integrity between the upper integrated circuit dies and the bonding layer as well as the die connectors may be eliminated or reduced

Methodology Applied
Scientific EffectCoefficient of thermal expansion (CTE) mismatch: Thermal Expansion

Data Source

PatentUS20250118707A1Integrated circuit packages and methods
Publication Date: 2025.04.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250118707A1 patent drawing
  • US20250118707A1 patent drawing
  • US20250118707A1 patent drawing

AI summary

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include a first die, a first gap-fill layer along sidewalls of the first die, a first bonding layer on the first die and the first gap-fill layer, and a first die connector in the first bonding layer. The first die connector may be directly over an interface between the first die and the first gap-fill layer.