IC Package Surface Treatment for Clean Die Singulation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the inability to effectively separate integrated circuit dies from a wafer due to the deposition of protective layers in trenches during the singulation process, leading to manufacturing defects and reduced yield.
Innovation Solution
A fluorine-based surface treatment is applied to the trenches to create hydrophobic sidewalls, preventing the deposition of protective layers and enabling clean separation of the dies during planarization, followed by a cleaning process to remove residual protective layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective layer is deposited over the wafer during singulation, then the integrated circuit dies are protected from damage, but the protective layer is also deposited in the trenches, preventing clean separation of the dies
Solution Approach 1:
The patent applies a hydrophobic surface treatment specifically to the trench regions, creating a local property difference between the trench sidewalls and other surfaces. This localized treatment prevents protective layer deposition in the trenches while allowing deposition elsewhere, enabling clean die separation without compromising overall protection
Solution Approach 2:
The hydrophobic surface treatment acts as an intermediary layer on the trench sidewalls that prevents the protective layer from adhering in the trench regions. This intermediary property allows the protective layer to be deposited on die surfaces for protection while excluding it from trench areas where it would interfere with separation
2Reliability
If the protective layer is deposited in the trenches, then the integrated circuit dies are protected, but the separation process becomes difficult and manufacturing defects increase
Solution Approach 1:
The hydrophobic surface treatment creates a localized property difference in the trench regions, making them resistant to protective layer deposition. This local modification simplifies the separation process by ensuring trenches remain free of protective layer material that would complicate die extraction
Solution Approach 2:
The patent converts the potential harm of protective layer deposition into a benefit by using the hydrophobic surface treatment to selectively prevent deposition in trenches. The protective layer deposition process itself becomes beneficial by filling trenches with the treatment, creating a clear boundary that facilitates separation
3Productivity
If conventional singulation processes are used, then manufacturing can proceed, but yield is reduced due to manufacturing defects from incomplete separation
Solution Approach 1:
The hydrophobic surface treatment is applied to the trenches before the protective layer deposition step. This preliminary action ensures that when the protective layer is subsequently deposited, the trenches are already prepared to reject the material, preventing defects before they occur and ensuring high-yield separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves yield and reduces manufacturing defects by ensuring clean separation of integrated circuit dies, enhancing the packaging process efficiency.
Implementation Method 1
performing a surface treatment in the trenches to form surface regions on the sidewalls of the trenches. The surface regions may be hydrophobic
Data Source
AI summary
A package includes a first integrated circuit die and a second integrated circuit die over and bonded to the first integrated circuit die. A first surface region of the second integrated circuit die is hydrophobic, and the first integrated circuit die and the second integrated circuit die are bonded together with dielectric-to-dielectric bonds and metal-to-metal bonds. The package further includes a first insulating material over the first integrated circuit and surrounding the second integrated circuit die. The first insulating material contacts the first surface region.


