IC Package Supports Using Fine Vias in Non-Photoimageable Dielectrics
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Solution Overview
Problem
Conventional integrated circuit (IC) package substrates and interposers face limitations in achieving high interconnect density without compromising mechanical and electrical stability, particularly in high-bandwidth, small form factor applications, due to undesirable mechanical and electrical properties of photoimageable dielectrics such as high loss tangents and coefficients of thermal expansion.
Innovation Solution
The use of non-photoimageable dielectric materials with conductive vias of less than 20 microns in diameter, combined with dielectric planarization and self-aligned features, allows for increased metal volume and interconnect density, improving reliability and reducing costs, while avoiding the drawbacks of conventional photoimageable dielectrics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photoimageable dielectric materials are used to achieve high interconnect density, then manufacturing capability is improved, but mechanical and electrical stability deteriorates due to high loss tangents and coefficients of thermal expansion
Solution Approach 1:
The patent changes the fundamental parameter of dielectric material selection from photoimageable to non-photoimageable materials. This parameter change resolves the contradiction by providing materials with inherently lower loss tangents and coefficients of thermal expansion, thereby improving mechanical and electrical stability while maintaining the capability to achieve high interconnect density through alternative fabrication approaches.
Solution Approach 2:
The patent employs composite dielectric materials that combine multiple materials with complementary properties. By creating composite structures, the patent achieves both the mechanical and electrical stability required for reliable operation and the manufacturing precision needed for high interconnect density, effectively resolving the contradiction between these opposing requirements.
2Ease of manufacture
If conventional photoimageable dielectrics are used, then ease of manufacture is maintained, but communication bandwidth is limited due to high loss tangents
Solution Approach 1:
The patent changes the dielectric material parameter from photoimageable to non-photoimageable, which fundamentally alters the energy loss characteristics. This parameter change enables higher communication bandwidth by reducing loss tangents, while the patent compensates for the loss of photoimaging capability by implementing alternative patterning and fabrication methodologies that maintain ease of manufacture.
3Reliability
If non-photoimageable dielectric materials are used, then mechanical and electrical stability is improved, but manufacturing complexity increases due to additional process steps
Solution Approach 1:
The patent applies preliminary action by pre-defining the patterns and structures in the non-photoimageable dielectric materials before final assembly. This approach allows the use of materials with superior mechanical and electrical properties while reducing manufacturing complexity, as the critical features are established in advance rather than requiring complex in-process adjustments.
Solution Approach 2:
The patent introduces intermediary materials and processes that bridge the gap between non-photoimageable dielectrics and the desired interconnect structures. These intermediaries facilitate the manufacturing process by providing temporary support, alignment references, or bonding interfaces, thereby reducing the overall complexity of working with non-photoimageable materials.
4Manufacturing precision
If smaller via diameters are used to increase interconnect density, then interconnect density is improved, but alignment precision requirements increase
Solution Approach 1:
The patent implements self-service through self-aligned fabrication processes where the smaller vias automatically align to predetermined features without requiring high-precision external alignment. The dielectric material structure itself provides the alignment references, allowing the system to self-correct and maintain precision even with reduced via diameters, thereby increasing interconnect density without proportionally increasing alignment precision requirements.
Data Source
AI summary
Disclosed herein are integrated circuit (IC) package supports and related apparatuses and methods. For example, in some embodiments, an IC package support may include a non-photoimageable dielectric, and a conductive via through the non-photoimageable dielectric, wherein the conductive via has a diameter that is less than 20 microns. Other embodiments are also disclosed.