IC Package Grounding Members for Dense TSV Crosstalk Reduction

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Solution Overview

Problem

Integrated circuit (IC) packages face challenges in increasing connectivity and input/output speeds due to limitations in the number of through-silicon vias (TSVs) that can be implemented, leading to issues with crosstalk and reduced signal quality when attempting to reduce the pitch between vias.

Innovation Solution

The implementation of grounding members at both sides of the semiconductor substrate provides additional signal return paths, reducing crosstalk between TSVs and allowing for a decrease in pitch, thereby increasing the number of TSVs that can be used, which enhances signal bandwidth and speed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the pitch between through-silicon vias (TSVs) is reduced to increase connectivity, then the number of TSVs increases, but crosstalk between signals increases and signal quality deteriorates

Engineering Contradiction:
Improvenumber of TSVsVSAvoidcrosstalk
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent introduces grounding members as intermediary structures between signal-carrying TSVs. These grounding members extend into the semiconductor substrate and provide intermediate ground paths that shield signal TSVs from each other, thereby reducing crosstalk while allowing reduced pitch between TSVs.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent extracts the grounding function from the traditional substrate plane and creates dedicated grounding members that extend vertically into the substrate. This separation allows grounding to be provided independently at specific locations between TSVs without requiring a continuous ground plane, enabling closer TSV spacing.

Inventive Principle:
Principle #2Taking out (Extraction)

2Quantity of substance

If the pitch between through-silicon vias (TSVs) is reduced to increase connectivity, then the number of TSVs increases, but signal quality deteriorates

Engineering Contradiction:
Improvenumber of TSVsVSAvoidsignal quality
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

Grounding members serve as intermediary reference potential structures between signal TSVs. By providing intermediate ground paths that extend into the substrate, they maintain stable reference potentials and reduce signal interference, thereby preserving signal quality even when TSV pitch is reduced.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Quantity of substance

If grounding members are added to reduce crosstalk and increase TSV density, then connectivity and bandwidth improve, but device complexity increases

Engineering Contradiction:
Improvenumber of TSVsVSAvoidstructure complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent segments the grounding function into discrete grounding members rather than using a continuous ground plane. Each grounding member is positioned strategically between specific TSVs, providing targeted crosstalk reduction while minimizing the total amount of ground structure required, thus controlling complexity.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20240105577A1Methods, systems, apparatus, and articles of manufacture to produce integrated circuit packages with grounding members
Publication Date: 2024.03.28 INTEL CORP
  • US20240105577A1 patent drawing
  • US20240105577A1 patent drawing
  • US20240105577A1 patent drawing

AI summary

Methods, systems, apparatus, and articles of manufacture to produce integrated circuit packages with grounding members are disclosed. An example semiconductor die disclosed herein includes a semiconductor substrate, metal interconnects proximate a first side of the semiconductor substrate, a metal contact proximate a second side of the semiconductor substrate opposite the first side, a first grounding member extending from a grounding interconnect of the metal interconnects to a first distal point in the semiconductor substrate, and a second grounding member extending from the metal contact to a second distal point in the semiconductor substrate, the first distal point closer to the first side of the semiconductor substrate than the second distal point is to the first side of the semiconductor substrate.