Interposer-Bonded IC Package With Heat Dissipation Pillars
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Solution Overview
Problem
The semiconductor industry faces challenges in creating smaller and more efficient packaging techniques for semiconductor dies as demand for miniaturization increases, requiring innovative solutions for heat dissipation and interconnect structures to enhance integrated circuit performance.
Innovation Solution
The integration of heat dissipation pillars in interposers that form a thermal pathway to conduct heat away from integrated circuit dies, combined with advanced interconnect structures that include front-side and back-side interconnects with different technology nodes to optimize power distribution and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation pillars are integrated into interposers to conduct heat away from integrated circuit dies, then heat dissipation performance is improved, but device complexity increases
Solution Approach 1:
The patent combines heat dissipation functionality with the interposer structure by integrating heat dissipation pillars directly into the interposer. This merging of thermal management function into the existing interposer component improves heat dissipation performance without requiring separate dedicated heat dissipation devices, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The interposer serves as an intermediary component between the integrated circuit dies and the substrate, and simultaneously functions as a heat dissipation pathway. The heat dissipation pillars within the interposer act as thermal conduits that mediate heat transfer from the dies to the substrate, resolving the contradiction by using the interposer as a dual-purpose structural and thermal management element.
2Reliability
If advanced interconnect structures with front-side and back-side interconnects at different technology nodes are used to optimize power distribution, then electrical conductivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The interconnect structure is segmented into front-side interconnects and back-side interconnects, each optimized for different technology nodes and different functional requirements. This segmentation allows each interconnect layer to be manufactured with appropriate precision levels suited to its specific function, reducing overall manufacturing precision requirements while maintaining high electrical conductivity through optimized power distribution pathways.
Solution Approach 2:
Different regions of the interconnect structure exhibit different quality characteristics - front-side interconnects are optimized with one technology node for specific functions while back-side interconnects use another technology node for different functions. This local optimization of interconnect properties at different locations and layers improves overall electrical conductivity without requiring uniform high-precision manufacturing across the entire structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance of integrated circuit dies by effectively managing heat and reducing resistance, enabling higher integration density and efficiency in semiconductor packaging.
Implementation Method 1
the pillars are heat dissipation pillars. The heat dissipation pillars of the interposer form a thermal pathway to conduct heat away from the integrated circuit dies during operation
Data Source
AI summary
In an embodiment, a device includes: a first integrated circuit die including a first device layer and a first front-side interconnect structure, the first front-side interconnect structure including first interconnects interconnecting first devices of the first device layer; a second integrated circuit die including a second device layer and a second front-side interconnect structure, the second front-side interconnect structure including second interconnects interconnecting second devices of the second device layer; and an interposer bonded to a back-side of the first integrated circuit die and to a back-side of the second integrated circuit die, the interposer including a die-to-die interconnect structure, the die-to-die interconnect structure including a pillar, the first integrated circuit die overlapping the pillar.