IC Package Hybrid Bonding for High-Bandwidth 3D Integration
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Solution Overview
Problem
The challenge in the semiconductor industry is to bond integrated circuit chips directly onto a substrate while accommodating increased integration density and 3D packaging, as traditional methods struggle with efficient interconnection and cost-effective manufacturing.
Innovation Solution
A hybrid bonding configuration is employed, utilizing direct metal-to-metal bonding between semiconductor dies and an interposer with a first pitch less than 9 μm, combined with conductive connectors having a second pitch greater than 30 μm, to facilitate high bandwidth and cost-effective connections for diverse interconnection requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If direct bonding methods are used for high integration density, then interconnection bandwidth is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent segments the bonding approach into two distinct methods: direct hybrid bonding for high-bandwidth applications and indirect bonding via conductive connectors for cost-effective applications. This segmentation allows each method to be optimized for its specific use case, resolving the contradiction between bandwidth and manufacturing complexity
Solution Approach 2:
The patent applies different bonding qualities to different locations and requirements: direct metal-to-metal hybrid bonding with sub-9μm pitch for areas requiring high bandwidth, and indirect bonding with larger pitch for areas where cost and manufacturing simplicity are priorities. This local differentiation resolves the contradiction by matching bonding method to functional requirement
2Quantity of substance
If hybrid bonding with pitch less than 9 μm is used, then interconnection bandwidth is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies hybrid bonding with high precision (pitch < 9μm) only where necessary for high bandwidth, rather than universally. For other applications, indirect bonding with larger pitch is used, reducing the overall manufacturing precision burden while maintaining high bandwidth where needed
Solution Approach 2:
The patent changes the pitch parameter based on application requirements: sub-9μm pitch for high-bandwidth direct bonding, and larger pitch for indirect bonding. This parameter differentiation resolves the contradiction by allowing high bandwidth where precision can be maintained while reducing precision requirements elsewhere
3Ease of manufacture
If indirect bonding with conductive connectors is used, then manufacturing cost is reduced, but interconnection bandwidth is limited
Solution Approach 1:
The patent applies indirect bonding with conductive connectors to specific locations where high bandwidth is not required, while using direct hybrid bonding in areas where bandwidth is critical. This local differentiation allows cost reduction in appropriate areas without sacrificing overall system performance
Solution Approach 2:
The patent segments the interconnection architecture into high-bandwidth direct bonds and cost-effective indirect bonds, allowing the system to achieve overall cost efficiency while maintaining necessary bandwidth performance through the combination of both approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reduced package size, lower manufacturing costs, and improved device yield and reliability by optimizing interconnection bandwidth and electrical connections for chips with varying signal transfer needs.
Implementation Method 1
first bonding pads of the first semiconductor die are bonded to and electrically connected to second bonding pads on the interposer through direct metal-to-metal bonding
Implementation Method 2
directly bonding a first bonding layer of the first semiconductor die to a second bonding layer on the interposer using a dielectric-to-dielectric bond
Data Source
AI summary
A package includes a first die over and bonded to a first side of a package component, where a first bond between the first die and the package component includes a dielectric-to-dielectric bond between a first bonding layer of the first die and a second bonding layer on the package component, and second bonds between the first die and the package component include metal-to-metal bonds between first bonding pads of the first die and second bonding pads on the package component, a first portion of a redistribution structure adjacent to the first die and over the second bonding layer, and a second die over and coupled to the first portion of the redistribution structure using first conductive connectors, where the first conductive connectors are electrically connected to first conductive pads in the second bonding layer.