IC Package Isolation Layer for CTE Mismatch at Die Interfaces

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Solution Overview

Problem

The challenge of CTE mismatch between semiconductor dies and gap-fill layers in integrated circuit packages leads to delamination risks, affecting the bonding integrity and reliability of the package.

Innovation Solution

An isolation layer is formed directly over the interfaces between lower integrated circuit dies and the gap-fill layer to mitigate the CTE mismatch, enhancing bonding integrity and reducing delamination risks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If semiconductor dies are directly bonded to gap-fill layers, then manufacturing process is simplified, but delamination occurs due to CTE mismatch

Engineering Contradiction:
Improvebonding process simplicityVSAvoidbonding integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An isolation layer is introduced as an intermediary between the semiconductor die and the gap-fill layer. This isolation layer has a coefficient of thermal expansion that matches the semiconductor die, thereby eliminating CTE mismatch and preventing delamination during thermal cycling while maintaining bonding integrity

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If isolation layer is added to prevent delamination, then bonding integrity is improved, but device complexity increases

Engineering Contradiction:
Improvebonding integrityVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The package structure is segmented into distinct functional layers: the semiconductor die, the isolation layer with matched CTE, and the gap-fill layer. This segmentation allows each layer to perform its specific function independently, preventing delamination while maintaining overall structural simplicity

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If CTE mismatch is not addressed, then manufacturing process remains simple, but package reliability deteriorates during operation

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidpackage reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The coefficient of thermal expansion parameter is changed by introducing an isolation layer with CTE matched to the semiconductor die. This parameter modification eliminates thermal stress and prevents delamination during thermal cycling, ensuring long-term package reliability without complicating the manufacturing process

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the reliability of integrated circuit packages by maintaining bonding integrity during manufacturing and operation, thereby ensuring better performance and longevity.

Implementation Method 1

the effect of the coefficient of thermal expansion (CTE) mismatch between the lower integrated circuit dies and the lower gap-fill layer on the bonding integrity

Methodology Applied
Scientific EffectCoefficient of thermal expansion (CTE) mismatch: Thermal Expansion

Data Source

PatentUS20250349641A1Integrated circuit packages and methods
Publication Date: 2025.11.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250349641A1 patent drawing
  • US20250349641A1 patent drawing
  • US20250349641A1 patent drawing

AI summary

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include a first die having a first substrate and a first through via extending through the first substrate, a first gap-fill layer along a sidewall of the first substrate, an isolation layer on a surface of the first substrate and a surface of the first gap-fill layer, a first bonding layer over the isolation layer, and a first bonding pad in the first bonding layer. The isolation layer may overlap an interface between the sidewall of the first substrate and a sidewall of the first gap-fill layer, and may extend on sidewalls of the first through via.