IC Package Thermal Path Design for Stacked Die Hot Spots
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Solution Overview
Problem
The challenge in semiconductor packaging is effectively dissipating heat generated by high-density electronic components while maintaining a small form factor and improving integration density.
Innovation Solution
The implementation of metal heat dissipation structures, such as dummy vias and thermal pads, combined with thinning and optimizing the isolation and bonding layers, enhances thermal conductivity and reduces thermal resistance in semiconductor packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-density electronic components are integrated into a smaller area, then integration density is improved, but heat dissipation becomes more difficult
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat dissipation by stacking multiple semiconductor dies vertically and providing separate heat dissipation paths for each die through independently controlled openings in the encapsulant. This allows heat to be dissipated from multiple levels simultaneously, resolving the contradiction between high integration density and effective heat dissipation.
Solution Approach 2:
The patent divides the heat dissipation function into multiple independent segments - each semiconductor die has its own heat dissipation opening and thermal via path. This segmentation allows targeted heat management for each die, enabling high-density integration while maintaining effective heat dissipation from each individual component.
2Productivity
If multiple semiconductor dies are stacked vertically, then integration density is improved, but thermal resistance increases
Solution Approach 1:
The patent introduces thermal vias as intermediary structures that extend through the encapsulant material to provide direct thermal conduction paths from each semiconductor die to the heat dissipation openings. These thermal vias act as mediators that overcome the thermal resistance of the encapsulant material, enabling effective heat transfer in the vertical stacking configuration.
Solution Approach 2:
The patent employs a composite structure combining semiconductor dies, encapsulant material, and metal thermal vias. The metal thermal vias provide high thermal conductivity pathways through the otherwise thermally resistive encapsulant, creating a composite system that maintains both the structural integrity of the stacked package and efficient heat dissipation.
3Temperature
If heat dissipation structures are added to manage hot spots, then thermal dissipation efficiency is improved, but device complexity increases
Solution Approach 1:
The heat dissipation openings in the encapsulant serve multiple functions: they provide thermal conduction paths, allow for thermal expansion, and can be positioned to target specific hot spot regions. This multi-functionality reduces the need for additional dedicated heat dissipation structures, thereby managing thermal efficiency without proportionally increasing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves thermal dissipation efficiency, facilitates targeted hot spot management, and simplifies integration with SoIC processes, while allowing for smaller form factors and higher integration densities.
Implementation Method 1
heat may be dissipated away from the bottom semiconductor device by metal heat dissipation structures
Implementation Method 2
thinning and optimizing the isolation and bonding layers, enhances thermal conductivity and reduces thermal resistance
Data Source
AI summary
A device package includes a first die comprising a semiconductor substrate; an isolation layer on the semiconductor substrate, wherein the isolation layer is a first dielectric material; a first dummy via penetrating through the isolation layer and into the semiconductor substrate; a bonding layer on the isolation layer, wherein the bonding layer is a second dielectric material that has a smaller thermal conductivity than the first dielectric material; a first dummy pad within the bonding layer and on the first dummy via; a dummy die directly bonded to the bonding layer; a second die directly bonded to the bonding layer and to the first dummy pad; and a metal gap-fill material between the dummy die and the second die.