Integrated Circuit Package Via Geometry for Delamination Resistance

The patent applies curvature to the sidewalls of through vias, transitioning from straight sidewalls to curved sidewalls with specific radii of curvature. This curvature distributes stress more evenly at the interfaces between through vias and encapsulants, preventing stress concentration that leads to delamination and cracking. The curved geometry modifies the stress distribution pattern without fundamentally changing the via formation process.

The patent modifies the geometric parameters of through vias by introducing controlled curvature with specific radii of curvature. This parameter change transforms the sidewall geometry from straight to curved, achieving stress distribution optimization. The curvature radius is carefully selected to balance stress reduction benefits with manufacturing feasibility, ensuring the modified geometry can be achieved through standard fabrication processes.