Integrated Circuit Packages with Composite Bump Connectors
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Solution Overview
Problem
The semiconductor industry faces challenges in miniaturization and packaging techniques for semiconductor devices, particularly in reducing the physical size and power consumption of semiconductor devices while maintaining integration density and efficiency, as existing methods struggle to effectively utilize stacked semiconductor devices and efficient packaging processes.
Innovation Solution
The development of a composite bump design and process flow for integrated circuit packages, which involves forming conductive vias and redistribution layers to create efficient connectors and packaging structures, allowing for the stacking and interconnection of semiconductor dies, and utilizing a single seed layer for multiple plating processes to reduce manufacturing steps and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional packaging techniques are used for semiconductor devices, then the device structure is simple and manufacturing process is straightforward, but the physical size cannot be reduced effectively and integration density is limited
Solution Approach 1:
The patent transitions from traditional 2D planar packaging to 3D stacked packaging architecture, where multiple semiconductor dies are vertically stacked and interconnected through through-silicon vias (TSVs). This dimensional change enables significant reduction in device footprint while increasing integration density, directly resolving the contradiction between reducing physical size and maintaining packaging simplicity.
Solution Approach 2:
The patent implements nested packaging structures where multiple functional layers including redistribution layers, dielectric layers, and conductive vias are stacked within each other in a hierarchical manner. This nesting approach allows compact integration of multiple interconnection levels within the vertical space, enabling size reduction without proportionally increasing structural complexity.
2Ease of manufacture
If multiple separate seed layers are formed for different plating processes, then each connector can be precisely controlled, but the manufacturing process becomes complex and costly
Solution Approach 1:
The patent employs a single multi-functional seed layer that serves multiple purposes: it acts as the foundation for forming both first-type connectors (through electroplating) and second-type connectors (through electroless plating). This universal seed layer eliminates the need for separate seed layers for different connector types, simplifying the manufacturing process while maintaining precise connector formation through controlled selective plating.
Solution Approach 2:
The patent segments the connector formation process into distinct stages using the same seed layer: first forming first-type connectors in first openings via electroplating, then forming second-type connectors in second openings via electroless plating. This segmentation of the manufacturing process allows precise control over each connector type while using a unified seed layer structure, resolving the contradiction between process simplicity and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of smaller, more efficient semiconductor packages with reduced power consumption and improved integration, while also simplifying the manufacturing process and reducing costs through efficient use of resources and streamlined production.
Implementation Method 1
forming a first connector in the first opening over the seed layer, the first connector comprising a conductive material formed by an electroplating process
Implementation Method 2
forming a second connector in the second opening over the seed layer, the second connector comprising a conductive material formed by an electroless plating process
Data Source
AI summary
Integrated circuit (IC) packages and methods of forming the IC packages are provided. In an embodiment, IC dies are formed and are placed on a carrier to form a packaged semiconductor device. An encapsulant is formed over the IC dies and between the neighboring IC dies. The encapsulant and the IC dies are planarized to expose contacts on top surfaces of the IC dies, and redistribution layers (RDLs) are formed over the planarized encapsulant and the planarized IC dies. Openings are formed in a topmost dielectric layer of the RDLs to expose interconnects in the RDL, and a conductive seed layer is formed over the RDL and in the openings. Connectors of a first type and connectors of a second type are formed over the seed layer in the openings. The packaged semiconductor device is diced into individual IC packages.