Thermally Conductive IC Packaging Layers for Heat Dissipation
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Solution Overview
Problem
The heat generated during the operation of semiconductor integrated circuits (ICs) affects their quality, and existing materials and structures do not effectively manage this heat, leading to potential performance issues.
Innovation Solution
The use of thermally conductive dielectric layers and electrically conductive materials with high thermal conductivity, such as diamond and carbon-based 2D materials, are integrated into the IC structure to enhance heat dissipation, along with electrically conductive vias and interconnects that improve thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional materials and structures are used in IC manufacturing, then manufacturing processes are simpler and costs are lower, but heat dissipation is insufficient leading to quality degradation
Solution Approach 1:
The patent employs composite material structures combining diamond-like carbon (DLC) layers with silicon nitride (Si3N4) dielectric layers. The DLC layer provides superior thermal conductivity to enhance heat dissipation, while the Si3N4 layer provides electrical insulation. This composite approach allows the structure to simultaneously achieve high heat dissipation capability while maintaining functional requirements, resolving the contradiction between temperature management and structural complexity.
Solution Approach 2:
The patent integrates multiple functions into the interconnect structure: the DLC-coated copper interconnects simultaneously serve as electrical conductors, thermal conductors, and barrier layers against diffusion. The dielectric layers provide both electrical insulation and thermal management. This multi-functionality reduces the need for separate dedicated heat dissipation components, thereby managing temperature effectively without proportionally increasing structural complexity.
2Reliability
If thermally conductive materials like diamond and carbon-based 2D materials are integrated into IC structure, then heat dissipation is enhanced, but manufacturing complexity and cost increase
Solution Approach 1:
The patent utilizes plasma-enhanced chemical vapor deposition (PECVD) to deposit diamond-like carbon layers with controlled parameters including temperature, pressure, and gas composition. By optimizing these parameters, the process achieves high-quality DLC layers with superior thermal conductivity and appropriate mechanical properties, while keeping the manufacturing process compatible with existing semiconductor fabrication capabilities, thus maintaining ease of manufacture while improving reliability.
Solution Approach 2:
The patent employs silicon nitride dielectric layers as intermediary structures between the DLC interconnects and other IC components. These intermediary layers facilitate the integration of advanced thermal management materials into existing IC manufacturing processes by providing a compatible interface that simplifies the overall manufacturing complexity while enabling the use of high-performance thermally conductive materials.
3Temperature
If high thermal conductivity materials are used, then thermal stress is reduced, but electrical conductivity requirements become more difficult to satisfy
Solution Approach 1:
The patent employs a composite structure where diamond-like carbon coating is applied over copper interconnects. The copper core provides excellent electrical conductivity, while the DLC outer layer provides superior thermal conductivity and reduced thermal stress. This composite material approach allows the interconnect to simultaneously satisfy both electrical conductivity requirements and thermal stress reduction, resolving the contradiction between these two reliability aspects.
Solution Approach 2:
The patent applies different material properties to different parts of the interconnect structure: the copper core is optimized for electrical conductivity, while the DLC coating is optimized for thermal conductivity and stress management. This local differentiation of material quality allows each region to excel at its primary function, enabling the structure to meet both electrical and thermal reliability requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat generated by ICs, improving their quality and performance by reducing thermal stress and enhancing electrical conductivity.
Implementation Method 1
A thermal conductivity of the first dielectric layer, a thermal conductivity of the interconnects, a thermal conductivity of the second dielectric layer, or a combination of these, is larger than a thermal conductivity of cupper.
Data Source
AI summary
An electronic device including a substrate, a first dielectric layer, a plurality of interconnects, a second dielectric layer, a plurality of electrically conductive vias, and an electronic device is provided. The first dielectric layer is disposed on the substrate. The interconnects are disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The electrically conductive vias penetrate the second dielectric layer. The electronic device is disposed on the second dielectric layer and electrically connected to at least one of the interconnects through at least one of the electrically conductive vias. A thermal conductivity of the first dielectric layer, a thermal conductivity of the interconnects, a thermal conductivity of the second dielectric layer, or/and a thermal conductivity of the electrically conductive vias are larger than a thermal conductivity of cupper.