IC Package Patch Antenna with High-k Dielectric and Cavity

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Solution Overview

Problem

Existing antenna structures for wireless applications face challenges in achieving optimal frequency-related characteristics and reduced patch sizes while maintaining improved return loss and reduced capacitive coupling, which are essential for efficient RF signal transmission and reception.

Innovation Solution

The integration of a high-k dielectric layer and a cavity structure between the ground plane and the patch in an IC package, along with a specific arrangement of through-insulator vias, enhances the antenna's performance by increasing the effective dielectric constant and reducing capacitive coupling, allowing for smaller patch dimensions and improved return loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If a conventional antenna structure is used, then the antenna can transmit RF signals, but the patch size is large and return loss is not optimized

Engineering Contradiction:
Improvepatch sizeVSAvoidreturn loss
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent changes the dielectric parameter by introducing a high-k dielectric layer with dielectric constant greater than 3.9, which increases the effective dielectric constant between the patch and ground plane. This parameter change allows the antenna to achieve the same resonant frequency with a smaller patch area while optimizing return loss characteristics

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a high-k dielectric layer as an intermediary material between the patch and ground plane. This intermediary layer with higher dielectric constant than conventional materials enables improved electromagnetic field confinement and coupling, achieving better return loss and allowing reduced patch size

Inventive Principle:
Principle #24Intermediary (Mediator)

2Area of moving object

If the patch size is reduced, then the antenna occupies less space, but capacitive coupling increases and return loss deteriorates

Engineering Contradiction:
Improvepatch sizeVSAvoidcapacitive coupling
Core Design Contradiction:
Area of moving objectVSObject-generated harmful factors

Solution Approach 1:

By changing the dielectric parameter to a higher-k material, the patent increases the effective dielectric constant in the region between patch and ground plane. This parameter change reduces the electric field strength for the same voltage, thereby reducing capacitive coupling effects and allowing smaller patch dimensions without performance degradation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The high-k dielectric layer acts as an intermediary that modifies the electromagnetic field distribution. It provides better field confinement and control, reducing unwanted capacitive coupling between the patch and ground plane while enabling compact antenna design

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in improved antenna performance with reduced patch sizes, enhanced return loss, and decreased signal noise, enabling efficient RF signal transmission and reception across a wide frequency range.

Implementation Method 1

the integration of a high-k dielectric layer and a cavity structure between the ground plane and the patch in an IC package, along with a specific arrangement of through-insulator vias, enhances the antenna's performance by increasing the effective dielectric constant

Methodology Applied
Scientific EffectDielectric constant: Dielectric Permittivity

Implementation Method 2

enhances the antenna's performance by increasing the effective dielectric constant and reducing capacitive coupling

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS10411328B2Patch antenna structures and methods
Publication Date: 2019.09.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10411328B2 patent drawing
  • US10411328B2 patent drawing
  • US10411328B2 patent drawing

AI summary

An antenna structure includes a ground plane in a first metal layer of an integrated circuit (IC) package, a patch in a second metal layer of the IC package, a cavity structure between the ground plane and the patch, and a high-k dielectric layer between the ground plane and the patch.