IC Recess Filling with Selective Growth to Avoid Seams and Voids
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Solution Overview
Problem
Existing methods for filling recesses in integrated circuit structures often result in seams or voids due to conformal metal oxide deposition on sidewalls, leading to defects in the IC structures.
Innovation Solution
A bottom-up growth procedure using selective growth and angled etch or sacrificial material to form recesses in dielectric materials, where a first material is deposited on the sidewalls and bottom of the recess, followed by an angled etch to remove portions of the sidewalls, avoiding seams or voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conformal metal oxide deposition is performed on sidewalls of recesses, then complete coverage of the recesses is achieved, but seams or voids are formed leading to defects
Solution Approach 1:
A sacrificial material is deposited on the sidewalls of the recesses before filling with the target material. This preliminary deposition ensures that the sidewalls are covered during the filling process, preventing seams or voids from forming. The sacrificial material is later removed, leaving a defect-free filled recess structure.
Solution Approach 2:
The sacrificial material acts as an intermediary substance that facilitates the filling process. It temporarily occupies the sidewalls during deposition, enabling complete and uniform coverage of the recesses. After serving its mediating function, it is removed to reveal the properly filled structure without defects.
2Manufacturing precision
If material is deposited conformally on all surfaces including sidewalls, then uniform coverage is achieved, but seams and voids are created
Solution Approach 1:
The harmful effect of conformal deposition on sidewalls is eliminated by selectively removing the deposited material from the sidewalls using a sacrificial material approach. The target material is deposited only on the bottom surface, while the sidewalls are protected by the sacrificial material that is subsequently removed.
Solution Approach 2:
Different regions of the recess receive different treatments: the bottom surface receives the target material deposition, while the sidewalls are protected by sacrificial material. This localized quality approach ensures uniform material distribution on the bottom without creating seams or voids on the sidewalls.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents defects by ensuring uniform material distribution within the recesses, enhancing the integrity and reliability of the IC structures.
Implementation Method 1
A bottom-up growth procedure can be performed to produce a second material on the first material, wherein the bottom-up growth procedure prevents producing seams or voids
Implementation Method 2
An angled etch procedure, or a sacrificial material and etch procedure can be performed to remove at least a portion of the first material from the sidewalls of the recess
Data Source
AI summary
Disclosed herein are IC structures, packages, and devices that include recesses processed via selective growth. An example integrated circuit (IC) structure, includes a first dielectric material, a second dielectric material on the first dielectric material, and a recess in the second dielectric material, wherein the recess includes a bottom, a top, and sidewalls. The IC further includes a first material within the recess and at a bottom of the recess, wherein the first material includes a metal and oxygen, a self-assembled monolayer (SAM) material, or an organic material, and a second material within the recess and between the first material and the top of the recess, wherein the second material is in contact with the sidewalls of the recess.