Integrated Circuit Sensing Electrodes with Upward Extensions

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Solution Overview

Problem

Existing integrated circuits (ICs) for DNA sequencing require a large number of processing steps, leading to increased costs and limited sensitivity due to the use of passivation layers that restrict material choices and electrode surface area, which affects signal-to-noise ratio and miniaturization.

Innovation Solution

The integration of ion-sensitive electrodes with upwardly extending portions into the metallization stack of the IC, allowing for increased electrode area and reduced well dimensions, combined with a modified manufacturing process that incorporates a patterned metal layer for high-resolution etching and reduced processing steps, uses Ta2O5 as a pH-sensitive material for improved linearity and moisture protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the passivation layer is used as the pH sensitive material on the extended gate electrodes, then the underlying structures of the IC are protected from external influences, but the sensitivity of the FETs is limited due to the minimum thickness requirement of the passivation layer and the restricted material choices

Engineering Contradiction:
Improveprotection of underlying structuresVSAvoidsensitivity of FETs
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The solution segments the protective and sensing functions into separate layers: a thick passivation layer (50-200 nm) for protection and a thin ion-sensitive layer (5-50 nm) for sensing. This segmentation allows each layer to be optimized independently - the passivation layer provides sufficient thickness for protection while the ion-sensitive layer provides high sensitivity with minimal thickness requirements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The solution uses composite material structure combining a standard passivation material (such as silicon oxide) with an ion-sensitive material (such as Ta2O5, Al2O3, or Si3N4). This composite approach allows the system to benefit from both the protective properties of the passivation layer and the sensing properties of the ion-sensitive material, resolving the contradiction between protection and sensitivity.

Inventive Principle:
Principle #40Composite materials

2Area of moving object

If the surface area of the sensor electrode is decreased, then the IC can be miniaturized, but the signal to noise ratio decreases

Engineering Contradiction:
Improvesurface area of sensor electrodeVSAvoidsignal to noise ratio
Core Design Contradiction:
Area of moving objectVSMeasurement precision

Solution Approach 1:

The solution extends the electrode surface area into the vertical dimension by creating upwardly extending portions that protrude into the sample well. This dimensional transformation allows the electrode to maintain a small footprint in the planar direction (enabling IC miniaturization) while increasing the effective sensing surface area vertically (maintaining signal-to-noise ratio).

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If a large number of additional process steps are used to manufacture the IC, then the pH-sensitive electrodes can be formed with proper structure, but the cost of the IC increases

Engineering Contradiction:
Improvestructure of pH-sensitive electrodesVSAvoidcost of IC
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The solution merges the formation of the ion-sensitive layer with the existing passivation layer deposition process. Both layers are deposited using the same atomic layer deposition (ALD) process, allowing the ion-sensitive layer to be formed concurrently with or immediately following the passivation layer without requiring additional process equipment or significant process steps, thereby reducing manufacturing cost while maintaining structural precision.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the miniaturization of sample wells to sub-micron dimensions, enhances the signal-to-noise ratio, reduces manufacturing costs, and allows for a higher density of sensing electrodes while maintaining sensitivity and protection against environmental influences.

Implementation Method 1

each sensing electrode comprises an ion-sensitive layer such as a pH-sensitive layer... Ta2O5 as this also is particularly moisture impenetrable, and moreover has very good linearity of electrical response in a large pH range

Methodology Applied
Scientific EffectIon exchange: Ion Exchange

Implementation Method 2

by extending the area of the electrodes upwards into the wells, e.g. as part of, on, or substantially adjacent to the sidewalls of the sample wells, the area of the electrode can be significantly increased

Methodology Applied
Scientific EffectGeometric extension:

Implementation Method 3

the passivation layer is required to have a minimum thickness in order to effectively protect the underlying structures of the IC from external influences

Methodology Applied
Scientific EffectPhysical barrier protection: Physical Containment

Data Source

PatentUS9606079B2Integrated circuit with sensors and manufacturing method
Publication Date: 2017.03.28 NXP BV
  • US9606079B2 patent drawing
  • US9606079B2 patent drawing
  • US9606079B2 patent drawing

AI summary

Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a plurality of sensing electrodes (34) over said substrate, each sensing electrode being electrically connected to at least one of said circuit elements; and a plurality of wells (50) for receiving a sample, each sensing electrode defining the bottom of one of said wells, wherein each sensing electrode comprises at least one portion (34′) extending upwardly into said well. A method of manufacturing such an IC is also disclosed.