IC Socket Housing with Embedded Metal Mesh for Thermal Management
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Solution Overview
Problem
High-power integrated circuits (ICs) face significant thermal management challenges due to increasing power densities and heat transfer issues, leading to pin temperature rises that can cause damage to socket materials and deformation, especially in high-performance applications like gaming and video processing.
Innovation Solution
The development of an IC socket with a high thermal conductivity dielectric housing and embedded metal mesh structures that facilitate heat transfer from pins to an outer metal frame, combined with thermal grease or gel for improved heat dissipation and a high-k underfill for lateral heat transfer, effectively managing thermal loads and preventing material degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-power ICs are used to increase performance, then processing capability is improved, but pin temperature rises causing material damage
Solution Approach 1:
The patent introduces a dielectric material with high thermal conductivity as an intermediary substance between the socket pins and the housing. This dielectric acts as a thermal mediator that conducts heat away from the pins while maintaining electrical insulation, thereby resolving the contradiction between high power operation and temperature control
Solution Approach 2:
The patent employs composite materials combining dielectric properties with high thermal conductivity. The housing structure integrates metallic components for heat dissipation with dielectric materials for electrical insulation, creating a composite system that manages both thermal and electrical requirements simultaneously
2Reliability
If socket housing materials are used to insulate pins, then electrical insulation is improved, but heat dissipation deteriorates
Solution Approach 1:
The patent uses composite materials that combine dielectric properties with high thermal conductivity. The housing structure integrates metallic components for heat dissipation with dielectric materials for electrical insulation, creating a composite system that manages both thermal and electrical requirements simultaneously
Solution Approach 2:
The patent changes the thermal conductivity parameter of the dielectric material by selecting materials with exceptionally high thermal conductivity values. This parameter change allows the dielectric to maintain its electrical insulation function while dramatically improving its heat dissipation capability
3Area of moving object
If pin density is increased to reduce form factor, then area is reduced, but thermal management becomes more difficult
Solution Approach 1:
The high thermal conductivity dielectric material acts as a thermal intermediary that efficiently conducts heat away from densely packed pins. This mediator enables effective thermal management in high-density configurations by providing dedicated thermal pathways for each pin or group of pins
Solution Approach 2:
The patent segments the thermal management approach by providing individual or localized thermal pathways for different pin groups. The housing structure is designed with segmented heat dissipation zones that correspond to the pin density distribution, allowing independent thermal management of different regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces pin temperature and prevents damage to socket materials by efficiently channeling heat away from the pins, ensuring reliable operation of high-power ICs in dense packaging configurations.
Implementation Method 1
embedded metal mesh structures that facilitate heat transfer from pins to an outer metal frame
Implementation Method 2
combined with thermal grease or gel for improved heat dissipation
Implementation Method 3
and a high-k underfill for lateral heat transfer
Data Source
AI summary
An integrated circuit (IC) socket comprising a housing with a land side, an opposing die side, and sidewalls around a perimeter of the housing. The housing comprises a first dielectric. A plurality of socket pins extends from the land side of the housing through socket pin holes in the housing over the die side of the housing. A second dielectric is within the interstitial regions between the socket pins and sidewalls of the socket pin holes. A frame structure extends around at least a portion of the perimeter of the housing, and a mesh structure is embedded within the first dielectric. The mesh structure has plurality of mesh filaments extending between the plurality of socket pin holes and coupled to the frame structure.


