Integrated Circuit Standard Cell Source Drain Contact Merging
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Solution Overview
Problem
The challenge in semiconductor integrated circuit design is to improve layout density, manufacturing process stability, and device performance while reducing the complexity of source/drain contact connections, which are typically high in layers and congested with metal lines.
Innovation Solution
The proposed solution involves an integrated circuit design with a reduced number of source/drain contact layers, specifically connecting multiple transistors through a single source/drain contact, which lowers the overall height of the circuit and increases the degree of freedom for metal lines, thereby reducing pin congestion and enhancing manufacturing stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple source/drain contact layers are used to connect transistors, then connection reliability is improved, but device complexity and pin congestion increase
Solution Approach 1:
The patent merges multiple source/drain contact connections into a single shared contact structure. Multiple transistors (both PMOS and NMOS) share common source/drain contacts, eliminating the need for separate contact layers for each transistor. This reduces the number of contact layers from multiple to just one, while maintaining reliable electrical connections through the shared contact structure.
Solution Approach 2:
The shared source/drain contact structure serves multiple functions simultaneously: it provides electrical connection for multiple PMOS transistors, multiple NMOS transistors, and acts as a common power/ground distribution point. This multi-functional contact structure reduces overall device complexity while maintaining connection reliability.
2Reliability
If multiple source/drain contact layers are used, then connection reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
By merging multiple contact layers into a single shared contact structure, the patent reduces the number of alignment steps required during manufacturing. Instead of requiring precise alignment between multiple separate contact layers, the manufacturing process only needs to form one contact structure that serves multiple transistors, significantly reducing alignment precision requirements.
3Area of moving object
If standard cell size is reduced, then layout density is improved, but manufacturing process stability deteriorates
Solution Approach 1:
The shared source/drain contact structure allows multiple transistors to be packed more closely together, reducing the overall standard cell area. By eliminating redundant contact layers and using a common contact structure, the patent achieves higher layout density while maintaining manufacturing stability through simplified process steps.
Solution Approach 2:
The patent changes the structural parameter of the contact system from multiple separate layers to a single shared structure. This parameter change enables smaller standard cell dimensions while maintaining manufacturing process stability by reducing the number of process steps and alignment requirements.
4Adaptability or versatility
If source/drain contacts are extended in the second direction, then connection flexibility is improved, but metal line congestion increases
Solution Approach 1:
By extending the shared source/drain contact in the second direction to serve multiple transistors, the patent improves connection flexibility without requiring additional metal lines. The single extended contact structure provides versatile connections to multiple devices, reducing metal line congestion while maintaining adaptability.
Data Source
AI summary
An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.