Integrated Circuit Standard Cell Library with H-Shaped Jumper
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Solution Overview
Problem
As semiconductor manufacturing advances and transistor sizes decrease, there is a need for more integrated components in semiconductor devices, such as system-on-chip (SoC) applications, which demands innovative designs for integrated circuits (ICs) to enhance performance and efficiency.
Innovation Solution
The design of integrated circuits includes conductive lines and contacts arranged in specific configurations, such as H-shaped or L-shaped jumpers, to form single nodes by electrically connecting conductive lines and contacts, allowing for the skipping of certain conductive lines and reducing the risk of electric shorts, while maintaining functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If more transistors are integrated in semiconductor devices to meet increasing performance demands, then device performance and functionality are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor device into multiple standard cells, each containing specific functional blocks (logic gates, flip-flops, etc.). This modular approach allows complex functionality to be built from simpler, standardized units, making design and manufacturing more manageable while achieving high device performance through increased transistor integration.
Solution Approach 2:
The patent utilizes parameter changes by scaling transistor dimensions (width, length) and adjusting doping concentrations to optimize device performance. By systematically varying these parameters across different standard cell types and configurations, the patent achieves high-performance functionality while maintaining manageable complexity through standardized design parameters.
2Quantity of substance
If transistor size is reduced to integrate more components, then component density is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent addresses manufacturing precision challenges by systematically scaling transistor parameters (channel width, channel length, oxide thickness) according to established design rules. This parameter-based approach allows consistent miniaturization across multiple transistors while maintaining manufacturing feasibility through standardized dimension changes that align with fabrication capabilities.
Solution Approach 2:
The patent applies local quality by optimizing specific transistor parameters in different regions of the standard cell based on functional requirements. Critical transistors handling sensitive signals may have different width-to-length ratios or doping profiles compared to less critical transistors, allowing high component density while maintaining adequate manufacturing precision for each local region's specific needs.
3Device complexity
If conductive lines are skipped or removed to simplify connections, then device complexity is reduced, but electrical connection reliability may be affected
Solution Approach 1:
The patent applies the extraction principle by removing unnecessary intermediate conductive lines and contacts from the connection path between standard cells. By directly connecting essential elements and eliminating redundant structural components, the patent simplifies the overall device complexity while maintaining reliable electrical connections through optimized direct pathways.
Solution Approach 2:
The patent utilizes merging by combining multiple functions into shared conductive lines and contacts. For example, a single conductive line may serve as both a power supply line for multiple transistors and a signal line for logic gates, reducing the total number of conductive structures needed while ensuring reliable electrical connections through multi-functional design.
Data Source
AI summary
An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction that is perpendicular to the first direction, first contacts respectively disposed at two sides of at least one conductive line from among the plurality of conductive lines, and a second contact disposed on the at least one conductive line and the first contacts and forming a single node by being electrically connected to the at least one conductive line and the first contacts.