Integrated Thermal Bridges for IC Heat Spreading in Wirebond Assemblies
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Solution Overview
Problem
Integrated circuit (IC) structures face a bottleneck in heat dissipation from active semiconductor devices due to the limited ability of semiconductor bulk material to propagate heat efficiently, as high power density and localization of heat sources restrict effective heat flow.
Innovation Solution
Incorporating a thermally conductive bridge in the IC structure that couples to active semiconductor devices, extends horizontally, and reconnects to the semiconductor substrate at sections away from the devices, enhancing heat flow away from the active devices through a bulk wafer to a heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If heat is dissipated through the bulk semiconductor material, then heat flows from the active device to the heat sink, but the heat dissipation efficiency is limited due to high power density and localization
Solution Approach 1:
The patent introduces a lateral heat spreading layer that extends horizontally beneath the active semiconductor device, transforming the traditional vertical heat flow path into a three-dimensional pathway that combines vertical conduction through the bulk material with lateral spreading through the low-resistivity layer. This dimensional expansion allows heat to dissipate over a larger area, improving heat dissipation efficiency without significantly increasing structural complexity
Solution Approach 2:
The patent introduces an intermediary heat spreading layer with lower resistivity than the bulk semiconductor material. This intermediate layer acts as a thermal conduit that facilitates heat transfer from the localized high-power-density region to broader areas of the substrate, effectively mediating between the heat source and the heat sink to improve overall heat dissipation efficiency
2Area of stationary object
If the thermally conductive bridge extends horizontally away from the active device, then heat spreading area increases, but the device structure becomes more complex
Solution Approach 1:
The patent merges the thermally conductive bridge structure with the existing substrate and heat spreading layer, integrating the heat dissipation function into the existing device architecture rather than adding separate components. The bridge is formed as an extension of the low-resistivity material layer that is already present beneath the active device, thereby increasing heat spreading area while minimizing additional structural complexity
Solution Approach 2:
The thermally conductive bridge serves multiple functions: it acts as a heat spreader, provides mechanical support, and maintains electrical isolation between different regions. By designing the bridge to fulfill multiple roles within a single structure, the patent increases heat spreading area without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases heat dissipation from active semiconductor devices, allowing them to operate at higher frequencies and voltage levels by effectively spreading and propagating heat away from the source.
Implementation Method 1
a thermally conductive bridge, wherein the thermally conductive bridge is configured to couple to the active semiconductor device, horizontally extend away from the active semiconductor device, and then connect back to the FEOL portion on a section away from the active semiconductor device
Implementation Method 2
Heat from the active semiconductor device flux enters the bulk material at a high power density and spreads out in lateral directions and vertically down the bulk material to minimize the temperature rise
Data Source
AI summary
Embodiments of integrated circuit (IC) structures are disclosed. The IC structures include a semiconductor die mounted on a heat sink. In some embodiments, the semiconductor die includes a bulk wafer, a Front End of Line (FEOL) portion, and a Back End of Line (BEOL) portion. Active semiconductor devices are formed in the FEOL portion of the semiconductor die. The active semiconductor devices create heat. In order to increase heat flow away from an active semiconductor device, a thermally conductive bridge is formed in the BEOL portion that connects to the active semiconductor device and horizontally extends away from the active semiconductor device. The thermally conductive bridge then connects back to the semiconductor substrate at a section away from the active semiconductor device. Heat thus flows away from the active semiconductor device through the bulk wafer down to the heat sink.