ICP Plasma Source with Separation Grid and Independent Substrate Heating
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Solution Overview
Problem
Conventional inductively coupled plasma (ICP) sources for high plasma generation efficiency and wide operational range have a small active zone, leading to reduced plasma uniformity and efficiency in substrate processing, and lack precise temperature control during plasma processing.
Innovation Solution
The method involves generating an inductively coupled plasma within a gas injection channel using an induction coil positioned proximate to the sidewall, with a separation grid between the plasma source and the substrate, and independent temperature control of the substrate using lamps, allowing for efficient delivery of high-density neutral plasma species and improved plasma uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a small active zone is used in conventional ICP sources to achieve high plasma generation efficiency and wide operational range, then plasma generation efficiency is improved, but plasma uniformity deteriorates
Solution Approach 1:
The plasma source is divided into two distinct zones: a small active zone adjacent to the ICP coil for efficient plasma generation, and a larger processing zone where plasma is delivered to the substrate. The separation grid divides these zones, allowing the small active zone to maintain high efficiency while the larger processing zone ensures uniform plasma distribution across the substrate surface.
Solution Approach 2:
A separation grid is introduced as an intermediary component between the plasma source and the substrate. This grid allows high-density plasma species to be delivered efficiently from the small active zone while distributing them uniformly across the larger substrate area, thus resolving the contradiction between efficiency and uniformity.
2Productivity
If plasma is directed toward the substrate from a small active zone, then plasma generation efficiency is improved, but chemical reactions reduce the number of radicals
Solution Approach 1:
The system segments the plasma processing into two distinct regions: plasma generation in the small active zone and plasma delivery through the separation grid. This segmentation allows radical-rich plasma to be generated efficiently while the separation grid controls the delivery process to minimize unwanted chemical reactions before substrate contact.
Solution Approach 2:
The separation grid extracts and delivers only the necessary plasma species to the substrate while filtering out reaction products. This selective extraction maintains a high concentration of reactive radicals at the substrate surface despite chemical reactions occurring in the plasma transport path.
3Device complexity
If conventional ICP sources are used without independent temperature control, then device complexity is reduced, but temperature control precision deteriorates
Solution Approach 1:
The temperature control system is segmented into independent heating and cooling zones. Heating elements are positioned on one side of the substrate while cooling elements are positioned on the other side, allowing independent control of temperature gradients across the substrate without requiring a completely complex control system.
Solution Approach 2:
Different regions of the substrate receive different thermal treatments through locally positioned heating and cooling elements. This local quality approach allows precise temperature control at different locations on the substrate simultaneously, achieving high temperature control precision without uniformly increasing overall system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances plasma uniformity and efficiency by maintaining high-density neutral plasma species delivery to the substrate, while enabling precise temperature control for improved substrate processing outcomes.
Implementation Method 1
generating an inductively coupled plasma within the gas injection channel using an induction coil positioned proximate to the sidewall
Implementation Method 2
heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid
Data Source
AI summary
Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.