ICP Plasma Source with Separation Grid and Independent Substrate Heating
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Solution Overview
Problem
Conventional inductively coupled plasma sources for high plasma generation efficiency and wide operational range have a small active zone, leading to reduced plasma uniformity and efficiency in substrate processing, and lack precise temperature control.
Innovation Solution
The method involves generating an inductively coupled plasma within a gas injection channel using an induction coil positioned proximate to the sidewall, with a separation grid between the plasma source and the substrate, and independent temperature control of the substrate using lamps, allowing for efficient delivery of radical species and improved plasma uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a small active zone is used in conventional ICP sources to achieve high plasma generation efficiency and wide operational range, then plasma generation efficiency is improved, but plasma uniformity deteriorates
Solution Approach 1:
The plasma source is divided into two distinct zones: a small active zone adjacent to the ICP coil for high-efficiency plasma generation, and a larger expansion region where plasma can uniformly expand and distribute. This segmentation allows each zone to optimize its function - the active zone maximizes plasma generation efficiency while the expansion region ensures plasma uniformity across the substrate surface.
2Adaptability or versatility
If chemical reactions occur between plasma species during substrate processing, then new species are created, but the number of radicals is reduced
Solution Approach 1:
A separation grid is introduced as an intermediary component between the plasma source and substrate. This grid selectively filters plasma species, allowing neutral radicals to pass through to the substrate while blocking ions and electrons. This enables the system to maintain high radical concentration for processing while still benefiting from the presence of diverse plasma species in the source region.
3Device complexity
If conventional plasma processing is used without independent temperature control, then the process is simpler, but precise temperature control is lost
Solution Approach 1:
The temperature control system is segmented into independent heating and cooling subsystems. Heating is achieved through resistive heating elements integrated into the substrate holder, while cooling is provided by a separate liquid cooling circuit. This segmentation allows independent control of substrate temperature, enabling precise temperature management without significantly increasing overall system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances plasma uniformity and efficiency by maintaining high density neutral plasma species near the substrate, while independent temperature control ensures precise processing conditions.
Implementation Method 1
generating an inductively coupled plasma within the gas injection channel
Implementation Method 2
electrons accelerated in the high electric field region ionize and dissociate this mixture, creating a new gas (plasma) having radicals and ions
Implementation Method 3
heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid
Data Source
AI summary
Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.