Ideal Diode Chip Layout for High Reverse Voltage
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Solution Overview
Problem
Existing ideal diodes have limited voltage withstand capability and cannot meet application requirements of high voltage scenarios due to the limitations of switch transistors in conventional BCD process, which increases production costs and complicates process technology.
Innovation Solution
The ideal diode chip separates the switch transistor from the control circuit, allowing for the use of discrete high voltage field-effect transistors and a low voltage control module, enabling flexible configuration of switch transistors to meet various voltage requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a switch transistor with high voltage withstand capability is used in conventional BCD process, then the reverse withstand voltage of the ideal diode is improved, but the manufacturing cost increases and process complexity increases
Solution Approach 1:
The patent divides the ideal diode into two separate modules: a high-voltage power transistor module and a low-voltage control circuit module. The power transistor module handles high voltage switching, while the control circuit module operates at low voltage. This segmentation allows each module to be optimized independently, enabling the use of high-voltage transistors only where necessary without requiring the entire control circuit to withstand high voltages, thereby reducing manufacturing costs and process complexity.
Solution Approach 2:
The control circuit is extracted from the high-voltage environment and placed in a separate low-voltage module. This extraction allows the control circuit to operate independently at low voltage, eliminating the need for high-voltage-rated components in the control section. The high-voltage power transistor module can use optimized high-voltage transistors without the added cost and complexity of protecting the entire control circuit from high voltage.
2Strength
If a switch transistor with high voltage withstand capability is used in conventional BCD process, then the reverse withstand voltage of the ideal diode is improved, but the device complexity increases
Solution Approach 1:
The patent segments the device into distinct high-voltage and low-voltage modules with separate packaging. The power transistor module is packaged separately from the control circuit module, allowing each to be manufactured and tested independently. This segmentation simplifies the overall manufacturing process by avoiding the need for complex high-voltage processing across the entire device, while still achieving the required reverse withstand voltage through the dedicated high-voltage power transistor module.
3Loss of energy
If discrete power transistor is used to withstand high voltage, then the voltage drop is reduced, but the source and drain of the switch transistor experience large voltage drop requiring high voltage withstand capability
Solution Approach 1:
The control circuit is extracted from the high-voltage path, allowing it to operate at low voltage while the power transistor handles the high-voltage switching. The control circuit reads the body diode voltage at high voltage conditions but processes control signals at low voltage, eliminating the need for the control circuit components to withstand high voltages while still benefiting from the low voltage drop across the power transistor channel.
Data Source
AI summary
The present disclosure provides an ideal diode chip, including a first pin and a second pin arranged on a packaging frame. A power transistor and a first substrate are arranged on the first pin, and a switch transistor and a control module are arranged on the first substrate. The first pin serves as a cathode of the ideal diode chip, and the second pin serves as an anode of the ideal diode chip. The ideal diode chip according to the present disclosure can meet application requirements of different high voltage scenarios.