Identification Key Generation via Semiconductor Process Variation

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Solution Overview

Problem

Existing security systems face challenges in protecting identification keys from attacks like side channel and reverse engineering, necessitating a secure method for generating and storing keys that leverages semiconductor process variations.

Innovation Solution

A device and method utilizing a physically unclonable function (PUF) based on semiconductor process variations, where conductive layers in a semiconductor chip are formed at specific densities to generate an identification key, with a reader determining the presence of a conductive layer to provide a unique key.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If identification keys are stored in computing devices, then security protection is provided, but the keys become vulnerable to side channel attacks and reverse engineering attacks

Engineering Contradiction:
Improvesecurity protectionVSAvoidvulnerability to attacks
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful effect of semiconductor process variations (which cause manufacturing imperfections) into a beneficial security feature. By designing the system to exploit these variations through density thresholds, each device naturally generates unique identification keys based on its specific manufacturing characteristics, making the previously harmful variability the foundation of security protection against attacks

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The identification key generation system is self-service in that each device automatically generates its own unique key based on its inherent manufacturing variations. The device uses its own physical characteristics (conductive layer density variations from manufacturing) to create the security credential, eliminating the need for external key distribution or storage that would be vulnerable to attacks

Inventive Principle:
Principle #25Self-service

2Reliability

If conductive layers are formed with density below the minimum design rule, then unique identification keys can be generated through process variation, but the formation of conductive layers becomes unreliable

Engineering Contradiction:
Improveunpredictability of identification keyVSAvoidformation reliability of conductive layer
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the density parameter of conductive layers from the conventional approach (where density is optimized for reliable formation) to a new regime (below minimum design rule density) where reliable formation is sacrificed. This parameter change enables the system to exploit manufacturing variations for generating unpredictable identification keys, as the conductive layers may or may not form depending on process variations

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively generates a unique and unpredictable identification key, resistant to duplication and attacks, by leveraging the randomness of conductive layer formation due to manufacturing process variations, ensuring enhanced security for personal information transmission.

Implementation Method 1

a plurality of conductive layers designed to be formed in a first region in a semiconductor chip, a density of the plurality of conductive layers disposed in the first region being equal to or greater than a first threshold and equal to or less than a second threshold, and the first threshold and the second threshold being less than a minimum density according to a design rule that ensures that all the plurality of conductive layers are formed in the first region

Methodology Applied
Scientific EffectSemiconductor process variation:

Implementation Method 2

a reader configured to determine whether a first conductive layer designated in advance among the plurality of conductive layers is formed and to provide an identification key

Methodology Applied
Scientific EffectPhysical unclonable function (PUF):

Data Source

PatentUS10658311B2Device and method for generating identification key
Publication Date: 2020.05.19 ICTK HLDG CO
  • US10658311B2 patent drawing
  • US10658311B2 patent drawing
  • US10658311B2 patent drawing

AI summary

Provided is a device for generating an identification key using a process variation during a manufacturing process of a conductive layer. The device for generating an identification key may include a plurality of conductive layers designed so as to be formed in a first region within a semiconductor chip, the density in which the plurality of conductive layers are disposed in the first region being at least a first threshold value and not more than a second threshold value, the first and second threshold values being less than a minimum density according to the design rules for ensuring that all of the plurality of conductive layers are formed in the first region; and a reader which provides an identification key by identifying if, among the plurality of conductive layers, a previously designated first conductive layer has been formed.