Double-Sided IGBT Module Cooling With Waterproof Sealing
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Solution Overview
Problem
Conventional IGBT modules experience poor heat dissipation due to single-sided heat radiation, leading to low power density and unreliable electrical connections, and poor sealing effects when attempting to improve heat dissipation by adding heat dissipation plates on both sides.
Innovation Solution
An IGBT module design featuring first and second heat dissipation plates on either side of the wafer, with insulating and thermally-conductive sheets and an insulating waterproof housing for double-sided heat dissipation, reliable connections, and enhanced sealing, including axial and radial waterproof members for improved stability and sealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If heat dissipation plates are arranged on two opposite sides of the wafer, then heat dissipation efficiency is improved, but connection stability and sealing effect deteriorate
Solution Approach 1:
The patent embeds the wafer within a housing structure that contains both heat dissipation plates on opposite sides. The housing nested within the assembly provides structural support and sealing, while the heat dissipation plates are nested on either side of the wafer, creating a compact integrated structure that maintains both thermal performance and connection stability.
Solution Approach 2:
The patent employs composite material structures, particularly in the housing that combines thermally conductive materials for heat dissipation with insulating and sealing materials for protection. The housing may include thermally conductive adhesive layers or composite structures that simultaneously achieve thermal management and mechanical bonding, resolving the contradiction between heat dissipation and connection stability.
2Power
If heat dissipation plates are arranged on two opposite sides of the wafer, then power density is improved, but sealing effect deteriorates
Solution Approach 1:
The housing structure is designed to nest around the wafer and heat dissipation plates, creating a sealed enclosure that protects the internal components while maintaining the dual-sided heat dissipation configuration. This nested arrangement allows high power density through efficient thermal management while preserving sealing integrity.
Solution Approach 2:
The patent introduces a housing as an intermediary structure that mediates between the heat dissipation requirements and sealing needs. The housing acts as a barrier that seals the assembly while accommodating the thermal management system, thus resolving the contradiction between power density improvement and sealing effect.
3Device complexity
If conventional single-sided heat dissipation is used, then device complexity is reduced, but heat dissipation efficiency deteriorates
Solution Approach 1:
The patent merges the housing structure with the heat dissipation function by integrating heat dissipation plates into the housing design. This combination allows the housing to serve dual purposes: structural protection and thermal management. The merging of functions achieves efficient heat dissipation without proportionally increasing device complexity.
Solution Approach 2:
The housing is designed as a multi-functional component that simultaneously provides mechanical protection, sealing, and heat dissipation capabilities. By making the housing universal in its functions, the patent achieves improved heat dissipation efficiency without adding separate dedicated heat dissipation structures, thus maintaining relatively simple device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves high heat dissipation efficiency, reliable electrical connections, and improved sealing, increasing the power density and electromagnetic compatibility of the IGBT module.
Implementation Method 1
a first insulating and thermally-conductive sheet is disposed between the first heat dissipation plate and the wafer. A second insulating and thermally-conductive sheet is disposed between the second heat dissipation plate and the wafer
Implementation Method 2
The heat dissipation plate is in contact with a side of the wafer for dissipating heat of the wafer
Implementation Method 3
since the wafer only radiates heat from a single side, the heat dissipation effect is poor
Data Source
AI summary
An insulated gate bipolar transistor (IGBT) assembly includes a wafer; a first heat dissipation plate and a second heat dissipation plate being disposed on two surfaces of the wafer in a thickness direction of the wafer respectively, a plurality of first heat dissipation pins being disposed at an interval from each other on a surface of the first heat dissipation plate facing away from the second heat dissipation plate, and a plurality of second heat dissipation pins being disposed at an interval from each other on a surface of the second heat dissipation plate facing away from the first heat dissipation plate; and an insulating waterproof housing covering a portion of the wafer exposed from the first heat dissipation plate and the second heat dissipation plate.