IGBT-Diode Boundary Structure for Recovery Breakdown Tolerance
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Solution Overview
Problem
In semiconductor devices where an insulated gate bipolar transistor (IGBT) and a diode are formed on a single substrate, the proximity of hole injection regions to diode regions leads to reduced breakdown tolerance during recovery operations due to hole flow from these regions.
Innovation Solution
A semiconductor device configuration that includes a boundary region between the hole injection and diode regions, featuring a carrier injection suppression layer to prevent hole injection, thereby enhancing breakdown tolerance during recovery operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If an insulated gate bipolar transistor and a diode are formed on one semiconductor substrate to reduce the size of the inverter apparatus, then the size is reduced, but holes flow from the hole injection region into the diode region and the breakdown tolerance during recovery operation is lowered
Solution Approach 1:
The patent divides the semiconductor substrate into distinct functional regions: a hole injection region (containing the IGBT), a diode region, and a boundary region between them. This segmentation prevents hole flow from the hole injection region into the diode region while maintaining the integrated structure that reduces overall size.
Solution Approach 2:
The boundary region acts as an intermediary zone between the hole injection region and the diode region. This intermediate structure suppresses the harmful hole flow while allowing both regions to function properly, thus maintaining compact size without sacrificing breakdown tolerance.
2Adaptability or versatility
If hole injection regions and diode regions are arranged adjacent to each other on the same substrate, then device integration is improved, but hole flow occurs and breakdown tolerance deteriorates
Solution Approach 1:
The semiconductor substrate is segmented into functionally distinct regions with a boundary region separating the hole injection region and diode region. This segmentation enables high-level integration while preventing harmful interactions between regions.
Solution Approach 2:
The boundary region has different properties than the adjacent functional regions, specifically designed to suppress hole flow. This local differentiation allows the boundary region to perform its protective function while the other regions maintain their optimal performance characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed configuration effectively suppresses hole flow into the diode region, improving the breakdown tolerance and operational efficiency of the semiconductor device during recovery operations.
Implementation Method 1
providing a boundary region between a hole injection region and a diode region and providing a carrier injection suppression layer for suppressing hole injection in the boundary region makes it possible to suppress the inflow of holes into the diode region
Data Source
AI summary
The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.