IGBT and Diode Layer Defects for Switching Loss Control
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Solution Overview
Problem
Existing semiconductor devices with IGBT and diode regions face challenges in adjusting forward characteristics and switching losses due to excessively low resistance in low-resistance layers, which requires additional steps like electron beam irradiation.
Innovation Solution
Incorporating a first defect in the semiconductor layer of the IGBT and diode regions that extends in the thickness direction, allowing for control of forward characteristics and switching losses by adjusting the component and density of the defect through laser annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation is used to form low-resistance layers, then impurity activation and amorphous layer recrystallization are achieved, but forward characteristic and switching loss cannot be adjusted independently
Solution Approach 1:
The invention changes the physical state and structural parameters of the semiconductor layer by introducing controlled defects (dislocations, vacancies, interstitials) during the ion implantation process. These defect parameters directly influence carrier mobility and recombination rates, enabling independent adjustment of forward characteristics and switching loss without adding process steps. The defect density and distribution serve as new controllable parameters that decouple the previously linked electrical characteristics.
2Reliability
If electron beam irradiation is added to adjust forward characteristic and switching loss, then performance adjustment is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The invention merges the previously separate functions of ion implantation (impurity introduction and amorphous layer repair) with the additional function of defect generation for performance tuning. By using the ion implantation process to simultaneously create controlled defects that adjust electrical characteristics, the need for separate electron beam irradiation steps is eliminated. This consolidation reduces manufacturing complexity while achieving the same performance adjustment goals.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables independent adjustment of forward characteristics and switching losses in IGBT and diode regions, improving performance without the need for special steps like electron beam irradiation.
Implementation Method 1
activating the impurities as a method for forming a p-type collector layer... and then activating the impurities as a method for forming a p-type collector layer in the IGBT region and forming an n+-type cathode layer on a back surface side of the semiconductor substrate. In such a method, an amorphous layer formed by damage during ion implantation can be recrystallized at the same time as activation of impurities
Implementation Method 2
forming impurities by ion implantation
Data Source
AI summary
A semiconductor device includes a semiconductor region provided with a semiconductor layer on a main surface side, and a first defect provided in the semiconductor layer and extending from the main surface side in a direction including a component in a thickness direction. The semiconductor region includes at least one of a diode region in which a cathode layer is provided as the semiconductor layer or an IGBT region in which a collector layer is provided as the semiconductor layer.