IGBT Diode Current Detection Boundary Instability
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Solution Overview
Problem
In semiconductor devices with both IGBT and diode element regions on a single substrate, current instability occurs at the boundary between these regions, affecting the accuracy of electric current detection due to the small size of the boundary area and its impact on the main active region.
Innovation Solution
The semiconductor device design includes an electric current detection region adjacent to each element region, with the collector region of the IGBT element extending to connect with the detection region, eliminating the boundary between the IGBT and diode, thereby stabilizing the detection current and improving detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If an electric current detection region is provided in one semiconductor substrate with IGBT and diode element regions, then electric current detection is enabled, but current instability occurs at the boundary between IGBT and diode regions affecting detection accuracy
Solution Approach 1:
The semiconductor substrate is divided into distinct element regions (IGBT and diode) and a separate electric current detection region. This segmentation isolates the detection function from the power switching regions, preventing boundary effects from affecting current stability while maintaining detection accuracy.
Solution Approach 2:
A trench structure acts as an intermediary barrier between the IGBT and diode element regions. This trench physically separates the two regions, eliminating the harmful boundary region where current instability occurs, while still allowing the detection region to function properly.
2Measurement precision
If the electric current detection region is spaced apart from the main active region by 100 μm or more, then carrier interference at the boundary region is prevented, but the space required for the detection region increases
Solution Approach 1:
The separation between element regions and detection region is achieved not only through horizontal spacing but also through vertical separation using trenches that extend into the substrate. This multi-dimensional approach reduces the required horizontal space while maintaining effective isolation.
Solution Approach 2:
The harmful boundary region is extracted or removed by introducing trenches that eliminate the transition zone between IGBT and diode regions. This removes the source of current instability without requiring excessive spacing, thereby reducing the overall space needed for the detection region.
3Adaptability or versatility
If both IGBT and diode element regions are formed in one semiconductor substrate, then device integration is achieved, but the boundary portion between IGBT and diode affects current stability in the detection region
Solution Approach 1:
The integrated substrate is segmented into distinct functional regions separated by trenches. This segmentation maintains the benefits of integration (multiple functions in one substrate) while eliminating the harmful interactions at region boundaries that would otherwise affect current stability.
Solution Approach 2:
Trenches serve as intermediary structures between the IGBT and diode element regions. These trenches act as barriers that prevent harmful electrical interactions and current instability from propagating to the detection region, while allowing both element types to coexist on the same substrate.
Data Source
AI summary
A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector region of the electric current detection region. Instability in the IGBT detection current caused by a boundary portion between the IGBT and the diode can be suppressed. In the same way, an electric current detection region is arranged adjacent to the diode element region, and a cathode region of the diode element region is extended to connect with a cathode region of the electric current detection region. Instability in the diode detection current caused by the boundary portion between the IGBT and the diode can be suppressed.