IGBT and Diode Chip Layout to Suppress RC-IGBT Snapback
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Solution Overview
Problem
Semiconductor devices with reverse-conducting insulated gate bipolar transistors (RC-IGBTs) face high power consumption due to the occurrence of snapback and MOS mode operations, which increase energy usage and heat generation.
Innovation Solution
Incorporating a combination of RC-IGBT and IGBT semiconductor chips, along with a diode chip connected in anti-parallel, to manage voltage and current flow efficiently, reducing the likelihood of snapback and MOS mode operations by ensuring proper conductivity modulation and heat distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If RC-IGBT is used to reduce device count, then device complexity is reduced, but power consumption increases due to snapback and MOS mode operations
Solution Approach 1:
The patent segments the single RC-IGBT functionality into separate IGBT and diode chips. The IGBT chip handles forward conduction while the diode chip handles reverse conduction, eliminating the snapback phenomenon that occurs in integrated RC-IGBT structures. This segmentation allows independent optimization of each component's electrical characteristics.
Solution Approach 2:
The patent introduces an intermediary control mechanism through separate gate control circuits for the IGBT and diode. This intermediary control prevents unwanted MOS mode operations by independently managing the turn-on and turn-off timing of each component, thereby reducing power consumption during switching transitions.
2Ease of manufacture
If RC-IGBT with integrated diode is used, then manufacturing process is simplified, but heat generation increases due to snapback operations
Solution Approach 1:
By separating the IGBT and diode into distinct chips, the patent eliminates the snapback phenomenon that causes excessive heat generation in integrated RC-IGBT structures. Each chip can be optimized for its specific function, reducing unwanted thermal effects during operation.
Solution Approach 2:
The patent converts the potential harm of separate chip assembly into a benefit by allowing independent thermal management. Each chip can be mounted on separate heat sinks or thermal pathways, converting the manufacturing complexity into a thermal management advantage that reduces overall heat generation.
3Use of energy by moving object
If separate IGBT and diode chips are used, then power consumption is reduced, but device complexity increases
Solution Approach 1:
The patent merges the control logic for the separate IGBT and diode chips into an integrated control system that manages both components through coordinated gate signals. This merging of control functions reduces the perceived device complexity while maintaining the power consumption benefits of separate physical chips.
Solution Approach 2:
The patent creates a universal module design where the separate IGBT and diode chips can be used in various converter topologies (boost, buck, flyback, etc.). This multi-functionality reduces the overall system complexity by using the same modular approach across different applications.
Data Source
AI summary
According to an embodiment, a semiconductor device includes a first electrically conductive portion, a first semiconductor chip of a reverse-conducting insulated gate bipolar transistor, a second electrically conductive portion, a third electrically conductive portion, a second semiconductor chip of an insulated gate bipolar transistor, and a fourth electrically conductive portion. The first semiconductor chip includes a first electrode and a second electrode. The first electrode is electrically connected to the first electrically conductive portion. The second electrically conductive portion is electrically connected to the second electrode. The third electrically conductive portion is electrically connected to the first electrically conductive portion. The second semiconductor chip includes a third electrode and a fourth electrode. The third electrode is electrically connected to the third electrically conductive portion. The fourth electrically conductive portion is electrically connected to the fourth electrode and the second electrically conductive portion.