IGBT and Diode Power Module for SR Motor Control

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Solution Overview

Problem

Current electronic apparatuses controlling switched reluctance motors (SR motors) face challenges in achieving high performance and downsizing, particularly due to differences in inverter circuit configurations compared to those for permanent magnet motors (PM motors), leading to inefficiencies and reliability issues.

Innovation Solution

A semiconductor device is designed with a single package configuration, incorporating a first chip mounting portion for an IGBT and a second chip mounting portion for a diode, both electrically separated, and connected via conductive members, integrated into a power module for SR motor applications, enhancing heat dissipation and reducing heat loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If a single package configuration is used for both IGBT and diode chip mounting portions, then device integration and compactness are improved, but electrical isolation and heat dissipation performance may deteriorate

Engineering Contradiction:
Improvepackage volumeVSAvoidelectrical isolation
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The single package is segmented into first and second chip mounting portions that are electrically isolated from each other. The first chip mounting portion mounts the IGBT chip while the second chip mounting portion mounts the diode chip, with electrical isolation structures preventing electrical interference between the two semiconductor devices within the same package.

Inventive Principle:
Principle #1Segmentation

2Volume of moving object

If IGBT and diode are mounted in the same package, then device downsizing is achieved, but heat loss and thermal management become problematic

Engineering Contradiction:
Improvedevice sizeVSAvoidheat loss
Core Design Contradiction:
Volume of moving objectVSLoss of energy

Solution Approach 1:

The package is divided into separate first and second chip mounting portions with independent thermal pathways. Each semiconductor chip (IGBT and diode) has its own heat dissipation route, allowing optimized thermal management for each device while maintaining compact packaging.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different thermal management approaches are applied to different regions of the package. The first chip mounting portion and second chip mounting portion have independent heat dissipation structures tailored to the specific thermal requirements of each semiconductor device, with local optimization of thermal conductivity and heat sink design.

Inventive Principle:
Principle #3Local quality

3Reliability

If electrical separation is implemented between chip mounting portions, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidpackage structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The package structure is segmented into distinct first and second chip mounting portions with built-in electrical isolation. The isolation structures are integrated into the package design itself rather than added as separate components, achieving electrical separation while maintaining relatively simple overall package geometry and manufacturing processes.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10546839B2Semiconductor device and electronic apparatus including semiconductor chips including an insulated gate bipolar transistor and a diode
Publication Date: 2020.01.28 RENESAS ELECTRONICS CORP
  • US10546839B2 patent drawing
  • US10546839B2 patent drawing
  • US10546839B2 patent drawing

AI summary

An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.