IGBT-Diode Substrate Layout for Recovery Current Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices with an insulated gate bipolar transistor and diode formed on a single substrate face challenges with high recovery current and low breakdown resistance due to hole flow from the transistor region to the diode region, which is inferior to discrete component configurations.
Innovation Solution
Incorporating carrier injection suppression layers in the insulated gate bipolar transistor region to prevent hole flow into the diode region, enhancing breakdown resistance during recovery operations by strategically placing these layers between gate electrodes and emitter layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If an insulated gate bipolar transistor and a diode are formed on one semiconductor substrate, then the inverter device size is reduced, but the breakdown resistance of the diode during recovery operation is lowered due to hole flow from the transistor region to the diode region
Solution Approach 1:
The patent divides the semiconductor device into distinct first and second regions with different structural characteristics. The first region contains the insulated gate bipolar transistor with its gate electrode and insulating film, while the second region contains the diode. This spatial segmentation allows each region to be optimized independently, preventing harmful hole flow from affecting the diode's breakdown resistance while maintaining the integrated compact structure.
Solution Approach 2:
The patent applies local quality by creating region-specific structures: the first region has a gate electrode and insulating film configuration optimized for transistor operation, while the second region has a simplified structure optimized for diode operation with high breakdown resistance. This local differentiation allows the diode region to maintain high breakdown resistance during recovery operation despite being integrated on the same substrate.
2Device complexity
If an insulated gate bipolar transistor and a diode are formed on one semiconductor substrate, then device integration is achieved, but the recovery current during recovery operation is increased due to hole flow from the transistor region to the diode region
Solution Approach 1:
By segmenting the semiconductor device into distinct first and second regions with different structural characteristics, the patent prevents harmful hole flow from the transistor region to the diode region. This segmentation maintains device integration while reducing recovery current, as the structural differences between regions create barriers to hole flow that would otherwise increase recovery current and energy loss.
Solution Approach 2:
The patent implements local quality through region-specific structures: the first region contains gate electrode and insulating film structures that control transistor operation, while the second region has optimized diode structures. This local differentiation reduces harmful interactions between the transistor and diode, thereby reducing recovery current and energy loss while maintaining integration.
Data Source
AI summary
A semiconductor device includes an insulated gate bipolar transistor region and a diode region adjacent to each other, wherein the insulated gate bipolar transistor region includes base layers of a second conductive type provided on the first main surface side, emitter layers of the first conductive type selectively provided in a surface layer of the base layer on the first main surface side, multiple gate electrodes provided on the first main surface side of the semiconductor substrate, aligned in a first direction extending along the first main surface, and facing the emitter layer, the base layer, and the drift layer via a gate insulating film, carrier injection suppression layers of the first conductive type selectively provided in a surface layer of the base layer on the first main surface side and sandwiched by the base layers in the first direction.