IGBT Drive Unit Gate Voltage Control for Fault Prevention

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Solution Overview

Problem

Existing drive units for switching elements, such as IGBTs, face issues with incomplete turn-on during on-state and incomplete turn-off during off-state due to unstable gate voltages, leading to potential overcurrent and overheating issues.

Innovation Solution

A drive unit with a drive circuit, determination section, and forcible processing section that controls the potential difference between the reference terminal and the opening and closing control terminal of the switching element, ensuring the potential difference reaches a specific threshold for on/off states, and includes a forcible discharge process using soft breaking and off-keeping switching elements to prevent faults.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gate voltage is controlled to turn on the IGBT, then the IGBT enters on-state, but the gate voltage may remain at an intermediate voltage causing incomplete turn-on

Engineering Contradiction:
Improveswitching element state reliabilityVSAvoiddrive unit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The determination section continuously monitors the gate voltage and compares it against threshold values to detect intermediate voltage states. This feedback mechanism identifies when the IGBT is not properly turned on or off, triggering the forcible processing section to correct the state by removing charge from the gate, ensuring reliable switching operation

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The drive unit proactively detects potential incomplete switching states before they cause harmful effects. By monitoring gate voltage in real-time and comparing it to predefined thresholds, the system takes preliminary action to prevent overcurrent and overheating by forcing the IGBT into the correct state before faults can develop

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the gate voltage is controlled to turn off the IGBT, then the IGBT enters off-state, but the gate voltage may remain at a voltage higher than intermediate voltage causing incomplete turn-off

Engineering Contradiction:
Improveswitching element state reliabilityVSAvoiddrive unit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The determination section monitors gate voltage during turn-off operations and detects when voltage remains above the off-state threshold. This feedback triggers the forcible processing section to remove excess charge from the gate, ensuring complete turn-off and preventing faulty conduction states

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system proactively detects incomplete turn-off conditions by comparing gate voltage against threshold values during the switching process. Before harmful effects can occur, the forcible processing section is activated to remove charge and force the IGBT into the proper off-state, preventing potential faults

Inventive Principle:
Principle #10Preliminary action

3Object-affected harmful factors

If the gate voltage remains at intermediate voltage, then the IGBT may experience overcurrent and overheating, but adding monitoring and correction increases drive unit complexity

Engineering Contradiction:
Improveovercurrent and overheating preventionVSAvoiddrive unit complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The determination section provides continuous feedback on gate voltage levels, detecting intermediate voltage conditions that could lead to overcurrent and overheating. This feedback loop enables the forcible processing section to correct faulty states, preventing harmful effects while maintaining a relatively simple drive unit structure

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The determination section acts as an intermediary between the drive circuit and the IGBT, monitoring gate voltage and triggering correction only when necessary. This intermediary function prevents harmful effects by detecting intermediate voltage states and activating the forcible processing section, adding minimal complexity while providing robust protection

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS9172367B2Drive unit for switching element
Publication Date: 2015.10.27 DENSO CORP
  • US9172367B2 patent drawing
  • US9172367B2 patent drawing
  • US9172367B2 patent drawing

AI summary

In a drive unit for a switching element, a drive circuit changes the switching element between an on-state and an off-state, by controlling a potential difference between a reference terminal, which is one of a pair of ends of a current path of the switching element, and an opening-closing control terminal of the switching element. A determination section determines, if an on-operation command or an off-operation command is inputted as an operation signal for the switching element, whether or not the potential difference has reached a specific value toward which the potential difference shifts, in response to one of the operation commands, with respect to a threshold value by which the switching element is turned on. A forcible processing section removes charge for turning on the switching element from the opening-closing control terminal, if the determination section determines that the potential difference has not reached the specific value.