Reverse-conducting IGBT Power Module Drive Circuit
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Solution Overview
Problem
Existing technologies face limitations in improving the control properties of reverse-conducting IGBTs, particularly in high-speed turn-off switching operations due to the challenges of noise and switching loss associated with the formation of freewheeling diodes in the same chip, which affects the control characteristics.
Innovation Solution
A power module and drive circuit configuration that includes a capacitor and a switch element in series between the emitter of the IGBT and the ground, which suppresses the change in forward current of the freewheeling diode during turn-off switching operations, thereby reducing instantaneous electromotive force and improving control properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a freewheeling diode is formed in the same chip as the IGBT, then device integration is improved, but control properties deteriorate due to noise and switching loss during turn-off operations
Solution Approach 1:
The patent segments the power module into distinct functional regions: a first region containing the IGBT and a second region containing the freewheeling diode. This spatial segmentation reduces interference between the two devices while maintaining integration on the same chip, thereby improving control properties without sacrificing integration benefits.
2Loss of energy
If the change rate of collector-emitter voltage is increased during turn-off, then switching loss is reduced, but noise increases
Solution Approach 1:
The patent introduces a capacitor as an intermediary element connected between the emitter of the IGBT and ground. This capacitor acts as a noise filter that suppresses voltage fluctuations and reduces noise during turn-off operations, allowing for faster switching with reduced energy loss while maintaining signal integrity.
3Speed
If parasitic L/C/R components are minimized in chip design, then switching performance is improved, but design flexibility is reduced
Solution Approach 1:
The patent addresses parasitic effects not just within the chip plane but also through external circuit elements connected to the chip terminals. By extending the solution to external dimensions (external capacitors and circuit configurations), the patent achieves fast turn-off performance while maintaining chip design flexibility and manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-speed turn-off of reverse-conducting IGBTs with improved control properties by suppressing noise and reducing the impact of parasitic L/C/R components, enhancing the overall performance of the power module.
Implementation Method 1
a capacitor and a switch element disposed in series between the emitter of the IGBT and the ground of the drive circuit
Data Source
AI summary
A power module which includes a power semiconductor chip that includes an IGBT and a freewheeling diode formed in the same chip, and the power module includes a drive circuit that is connected to the power semiconductor chip and drives the IGBT on/off. The power module is configured by packaging the power semiconductor chip and the drive circuit, and is characterized by further including a capacitor and a switch element disposed in series between the emitter of the IGBT and the ground of the drive circuit. The switch element connects the emitter and the ground in the case where the drive circuit has the IGBT perform a turn off switching operation.