IGBT Gate Driver Feedback for Stable Negative Gate Voltage

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Solution Overview

Problem

Existing IGBT driver modules face challenges in accurately maintaining the Cs:Cg ratio for generating the required negative gate voltage, as capacitance variations can lead to inadequate voltage variance across the gate capacitance, affecting the switching performance between high and low drive phases.

Innovation Solution

The IGBT driver module incorporates a series capacitance charge adjustment component that dynamically adjusts the charge stored in the series capacitance based on determined gate voltage errors, ensuring the required voltage variance across the gate capacitance is achieved by comparing the gate voltage to a reference voltage and controlling current sources to compensate for capacitance variances.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a series capacitor topology is used to generate negative gate voltage, then the gate voltage can be shifted to achieve required negative voltage, but capacitance variations cause inadequate voltage variance across the gate capacitance

Engineering Contradiction:
Improvegate voltage generationVSAvoidvoltage variance across gate capacitance
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent implements a feedback mechanism where the actual gate voltage is measured and compared to the expected voltage. Based on this comparison, the charge on the series capacitor is dynamically adjusted to compensate for capacitance variations. This ensures that the voltage variance across the gate capacitance remains within required specifications despite manufacturing tolerances in capacitor values.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes the charge parameter of the series capacitor dynamically based on detected gate voltage errors. By adjusting the charge Q on the capacitor according to the relationship Q = C × V, where C is the capacitance and V is the voltage, the system compensates for variations in capacitance values to maintain proper voltage variance across the gate.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the series capacitance value is increased to compensate for capacitance variations, then voltage shifting capability is improved, but the voltage variance across the series capacitance becomes insufficient

Engineering Contradiction:
Improvenegative gate voltage generationVSAvoidvoltage variance detection
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The feedback mechanism continuously monitors the gate voltage and adjusts the series capacitor charge accordingly. This dynamic adjustment allows the system to maintain proper voltage variance even when the series capacitance value is changed, whether increased or decreased, ensuring reliable negative gate voltage generation without sacrificing measurement precision.

Inventive Principle:
Principle #23Feedback

3Ease of manufacture

If fixed charge is stored in the series capacitance during manufacturing, then initial gate voltage is established, but capacitance variations lead to switching performance degradation

Engineering Contradiction:
Improveinitial charge setupVSAvoidswitching performance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent performs preliminary action by establishing an initial charge on the series capacitor during manufacturing. This initial charge provides a starting point for gate voltage generation. The system then uses ongoing feedback control to adjust this charge and maintain proper switching performance despite capacitance variations, combining the benefits of simple initial setup with reliable ongoing operation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The feedback mechanism continuously monitors and adjusts the series capacitor charge to compensate for capacitance variations that would otherwise degrade switching performance. This ensures that the IGBT transitions between on and off states reliably regardless of manufacturing tolerances in the capacitor values.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively compensates for capacitance variations, ensuring the IGBT driver module consistently achieves the necessary voltage variance across the gate capacitance, thereby maintaining efficient switching performance between high and low drive phases.

Implementation Method 1

a series capacitance Cs integrated within the same integrated circuit device in which the IGBT driver module is implemented

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

control at least one current source to apply a current to the series capacitance proportional to the determined gate voltage error

Methodology Applied
Scientific EffectElectrical current flow: Conduction (electrical)

Data Source

PatentUS10003330B2IGBT driver module and method therefor
Publication Date: 2018.06.19 NXP USA INC
  • US10003330B2 patent drawing
  • US10003330B2 patent drawing
  • US10003330B2 patent drawing

AI summary

The present invention relates to an insulated gate bipolar transistor (IGBT) driver module for driving at least one gate of at least one IGBT device, and method therefor. The IGBT driver module comprises at least one series capacitance operably coupled between a driver component of the IGBT driver module and the at least one gate of the at least one IGBT device. The IGBT driver module further comprises at least one series capacitance charge adjustment component controllable to determine a gate voltage error (ΔGerr) at the at least one gate of the at least one IGBT device and dynamically adjust a charge of the at least one series capacitance based at least partly on the determined gate voltage error (ΔGerr).