IGBT Gate Drive Circuit With Threshold-Based Off-Hold Timing

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Solution Overview

Problem

Existing drive circuits for voltage-control semiconductor switching devices, such as IGBTs, face issues with accidental switch-on due to premature application of short-circuit between the gate and emitter, leading to voltage surges and potential damage.

Innovation Solution

A drive circuit configuration that includes signal generator circuitry, voltage detection circuitry, and an off-holding switching device, where the off-holding switching device is controlled based on the control terminal voltage threshold, ensuring a shorter delay between the initiation of the on-state command and the transition to the off-state, thereby preventing abrupt voltage changes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the off-holding switching device is controlled to apply short-circuit between gate and emitter to prevent accidental switch-on, then reliability is improved, but voltage surges may occur due to premature short-circuit application

Engineering Contradiction:
Improveprevention of accidental switch-onVSAvoidvoltage surges
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs voltage detection circuitry that continuously monitors the control terminal voltage and provides feedback to the off-holding circuitry. This feedback mechanism ensures the off-holding switching device is activated only when the control terminal voltage falls below the threshold value, preventing premature short-circuit application and subsequent voltage surges while still maintaining reliability by preventing accidental switch-on.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements preliminary voltage detection before activating the off-holding switching device. The voltage detection circuitry detects when the control terminal voltage has sufficiently decreased below the threshold value before the off-holding circuitry activates the short-circuit path. This preliminary action ensures the driven switching device is fully off before applying the short-circuit, preventing voltage surges while maintaining protection against accidental switch-on.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If the delay between on-state command and off-state transition is reduced, then productivity is improved, but voltage surges may occur due to insufficient discharge time

Engineering Contradiction:
Improveswitching speedVSAvoidvoltage surges
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The voltage detection circuitry provides real-time feedback on the control terminal voltage level, enabling the off-holding circuitry to activate the off-holding switching device at the precise moment when the voltage falls below the threshold. This feedback-based timing allows rapid switching transitions that improve productivity while ensuring sufficient discharge time to prevent voltage surges.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements dynamic control of the off-holding switching device activation timing based on the actual voltage discharge rate. The threshold value and detection mechanism adapt to the specific discharge characteristics of the driven switching device, allowing optimized switching speeds that maximize productivity while preventing premature short-circuit application that would cause voltage surges.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS8531212B2Drive circuit for voltage-control type of semiconductor switching device
Publication Date: 2013.09.10 DENSO CORP
  • US8531212B2 patent drawing
  • US8531212B2 patent drawing
  • US8531212B2 patent drawing

AI summary

A charging current is supplied to the gate (control terminal) of a driven switching device during an on-state command interval, for raising the gate voltage to an on-state value. Otherwise, discharging of the gate capacitance is enabled, for decreasing the gate voltage to an off-state value. A second switching device is connected between the gate and a circuit point held at the off-state voltage value, and is maintained in an on state while the gate discharging is enabled. At a first time point, the gate voltage rises above a threshold value. At a second time point, a voltage detection circuit detects that that the gate voltage has risen above the threshold value, causing the second switching device to be set in the off state. It is ensured that the delay between the first and second time points is shorter than a minimum duration of an on-state command interval.