IGBT Gate Temperature Sensing Without Chip Upsizing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing power converter technologies face challenges in preventing chip upsizing and effectively detecting temperature during switching operations of switching elements, as they require additional terminals and cannot accurately monitor temperature changes during active operation.
Innovation Solution
A power converter design that incorporates a second switching element connected between the positive and negative electrodes of a power supply, with a temperature detection element and unit to detect temperature levels based on the voltage of the control signal input terminal, allowing for compact design and real-time temperature monitoring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection circuit is arranged near the switching element, then the temperature can be detected, but the chip size increases
Solution Approach 1:
The gate electrode is designed to serve dual functions: controlling the switching operation of the semiconductor device and detecting its temperature. By incorporating a temperature detection element in the gate electrode, the patent eliminates the need for separate temperature detection circuits, thus preventing chip upsizing while enabling accurate temperature monitoring during switching operations
Solution Approach 2:
The patent combines the control function and temperature detection function into a single gate electrode structure. The temperature detection element is integrated within the gate electrode, merging two previously separate functions into one component, which resolves the contradiction between temperature detection capability and chip size
2Measurement precision
If a temperature detection circuit is used, then temperature can be detected, but the temperature during switching operation cannot be accurately detected
Solution Approach 1:
The temperature detection element is positioned in the gate electrode, which is directly connected to the channel region where switching operations occur. This preliminary positioning allows the detection element to be in close proximity to the heat generation source before switching occurs, enabling accurate temperature detection during switching operations rather than only in off states
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents chip upsizing and enables accurate temperature detection during switching operations, preventing damage from overheating and ensuring efficient power conversion.
Implementation Method 1
a temperature detection element connected to a control signal input terminal to which a control signal for controlling a switching operation of the second switching element is input and configured to detect the temperature of the second switching element
Data Source
AI summary
An object of the present invention is to provide a power converter capable of preventing upsizing of a chip on which a switching element is formed and detecting the temperature in a switching operation of the switching element. A power converter includes: an IGBT connected between an IGBT connected to the positive electrode side of a variable power supply and the negative electrode side of the variable power supply; a temperature detection resistor element connected to a gate to which a gate signal for controlling the switching operation of the IGBT is input and detecting the temperature of the IGBT; and a detector detecting the temperature level of the IGBT based on the voltage of the gate.