IGBT Gate Wire Layout for Stable Multi-Gate Driving

Solution Overview

Problem

Existing insulated gate bipolar transistors (IGBTs) face challenges in reducing on-resistance and switching loss while maintaining stable double or multiple gate driving, which often requires additional insulating layers and wiring, increasing manufacturing costs and potentially leading to non-uniform operation due to current concentration.

Innovation Solution

The semiconductor device employs a layout where multiple gate wires do not intersect, allowing for independent control of multiple gates without the need for additional insulating layers or wiring, by patterning the same metal layer for gate wires and electrode pads, thereby reducing manufacturing costs and ensuring stable operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional insulating layers and wiring are used to maintain stable double or multiple gate driving, then gate driving stability is improved, but manufacturing cost increases and device complexity increases

Engineering Contradiction:

Improvegate driving stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the gate wire and electrode pad into a single continuous conductive pattern formed from the same metal layer. This eliminates the need for separate insulating layers and additional wiring structures that would otherwise be required to connect multiple gates, thereby maintaining gate driving stability while reducing device complexity and manufacturing cost

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The conductive pattern serves multiple functions simultaneously: it acts as both the gate wire connecting to the gate electrode and the electrode pad for external connection. This multi-functionality eliminates the need for separate dedicated pad structures and additional insulating layers, resolving the contradiction between reliability and device complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If additional insulating layers and wiring are used to maintain stable double or multiple gate driving, then gate driving stability is improved, but manufacturing cost increases

Engineering Contradiction:

Improvegate driving stabilityVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the gate wire and electrode pad into a single continuous conductive pattern formed from the same metal layer. This eliminates the need for separate insulating layers and additional wiring structures that would otherwise be required to connect multiple gates, thereby maintaining gate driving stability while reducing device complexity and manufacturing cost

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The conductive pattern serves multiple functions simultaneously: it acts as both the gate wire connecting to the gate electrode and the electrode pad for external connection. This multi-functionality eliminates the need for separate dedicated pad structures and additional insulating layers, resolving the contradiction between reliability and device complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If multiple gate wires intersect, then layout flexibility is improved, but current concentration and non-uniform operation occur

Engineering Contradiction:

Improvelayout flexibilityVSAvoidoperation uniformity

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent segments the conductive pattern into distinct regions: a gate wire region extending from the gate electrode and an electrode pad region for external connections. This segmentation allows the pattern to be optimized for each function while maintaining electrical continuity, preventing current concentration at intersection points while preserving layout flexibility

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent transitions from a two-dimensional planar layout with intersecting wires to a pattern that extends in multiple dimensions, with the conductive pattern following the contour of the gate electrode structure. This dimensional change eliminates intersections while maintaining connectivity and layout flexibility

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11830790B2Semiconductor device

Publication Date: 2023.11.28 KK TOSHIBA

AI summary

A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.