IGBT Load Pad Connection via Groove
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Solution Overview
Problem
There is a need for semiconductor dies that can be efficiently and variably used in boards and IGBT modules, requiring effective electrical connection and decoupling of load pads to manage oscillations and maintain device stability.
Innovation Solution
The semiconductor die features a connection structure that electrically connects load pads with a low impedance and inductance, formed in a groove or wiring layer, allowing for flexible integration and reducing oscillations by directly connecting first and second load pads on the die level.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If load pads are laterally separated to reduce oscillations, then device stability is improved, but electrical connection impedance increases
Solution Approach 1:
The connection structure transitions from lateral routing to vertical routing by extending into the semiconductor body through grooves. This dimensional change allows electrical connection between laterally separated load pads without increasing lateral distance, thereby maintaining low impedance while preserving the stability benefits of lateral separation.
Solution Approach 2:
A connection structure comprising conductive material and filling material acts as an intermediary between the first and second load pads. This intermediary structure provides a low-impedance electrical path through the semiconductor body, reconciling the need for both lateral separation (for stability) and direct electrical connection (for low impedance).
2Object-affected harmful factors
If connection structure extends into semiconductor body to reduce impedance, then electrical connection is improved, but device complexity increases
Solution Approach 1:
The groove structure serves multiple functions: it provides a pathway for the connection structure to reach the semiconductor body interior, contains the conductive and filling materials, and maintains structural integrity. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity.
Solution Approach 2:
The connection structure utilizes controlled parameters including groove depth, conductive material composition, and filling material properties to achieve low impedance. By optimizing these parameters within defined ranges, the structure achieves effective electrical connection without requiring excessive structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient use of semiconductor dies in IGBT modules by suppressing oscillations and maintaining stable operation within safe operating areas, while allowing for flexible electrical connections without adverse impacts on other device characteristics.
Implementation Method 1
The connection structure electrically connects the first load pad and the second load pad. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.
Implementation Method 2
The wiring connection structure includes bond wires. The bond wires of the wiring connection structure have an inductance of at most 20 nH.
Data Source
AI summary
A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.