Parallel IGBT-MISFET Module for Low- and High-Current Loss Reduction
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Solution Overview
Problem
Current semiconductor modules with IGBT and MISFET devices in parallel circuits face challenges in reducing losses in both low and high current regions without enlarging the MISFET device, which affects electrical properties and cost efficiency.
Innovation Solution
The semiconductor module integrates an IGBT device with a MISFET device in a parallel switching circuit, where the MISFET device operates in a low current region and the IGBT device in a high current region, utilizing a wide bandgap semiconductor (SiC) for the MISFET to achieve high withstand voltage and reduced size, while the IGBT operates in a high current environment with a Si chip, optimizing chip area ratios and breakdown voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the MISFET device is enlarged to reduce losses in low current region, then the loss reduction effect is improved, but the chip area and cost increase
Solution Approach 1:
The patent changes the material parameter of the MISFET device from conventional semiconductor to wide bandgap semiconductor, which fundamentally alters the device characteristics. This material parameter change enables the MISFET to achieve high breakdown voltage and low conduction loss simultaneously without requiring a larger chip area, thus resolving the contradiction between loss reduction and area increase.
2Loss of energy
If the MISFET device is enlarged to reduce losses in high current region, then the loss reduction effect is improved, but the electrical properties and cost efficiency deteriorate
Solution Approach 1:
The patent applies parameter changes by utilizing the high breakdown voltage characteristic of wide bandgap semiconductor material. This enables the MISFET device to operate efficiently in high current regions without requiring size enlargement, maintaining excellent electrical properties while reducing losses.
Solution Approach 2:
The patent employs a composite structure where the MISFET device is constructed using wide bandgap semiconductor material, combining the advantages of high breakdown voltage and low conduction loss. This composite material approach allows the device to achieve superior performance in high current regions without compromising electrical properties or requiring increased chip area.
Data Source
AI summary
A semiconductor module includes an IGBT device, and a MISFET device that composes a parallel circuit together with the IGBT device. The semiconductor module generates a drain current of the MISFET device in a voltage range less than a built-in voltage of the IGBT device and generates a collector current of the IGBT device and a drain current of the MISFET device in a voltage range equal to or more than the built-in voltage.