Laminated IGBT Structure for Independent Collector-Drain Mode Control
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Solution Overview
Problem
Existing motor control units in electric vehicles face inefficiencies due to the inability of control chips to accurately control the operating mode of switching elements like RC-IGBT and SJ-RC-IGBT based on the operating status, which affects the conversion efficiency of the MCU.
Innovation Solution
The insulated gate bipolar transistor (IGBT) features a laminated multi-layer structure with separate metal electrodes connected to the collector and drain, allowing for independent power supply to these components, enabling precise control of operating modes such as MOSFET, IGBT, and FRD modes based on load conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If RC-IGBT or SJ-RC-IGBT is used as the switching element, then cutoff speed and Vcesat-Eoff tradeoff relationship are improved, but the control chip cannot accurately control the operating mode based on operating status
Solution Approach 1:
The patent segments the single power supply structure into dual independent power supplies (first power supply for collector, second power supply for drain), enabling separate control of different regions. This segmentation allows the control chip to independently adjust voltage levels and control modes for each power supply, thereby achieving accurate control of operating modes (IGBT mode, MOSFET mode, FRD mode) while maintaining the high cutoff speed and Vcesat-Eoff tradeoff characteristics of RC-IGBT structures.
2Loss of energy
If chip integration is performed on IGBT and FRD, then total loss of switching element is reduced, but conversion efficiency of MCU cannot be further improved due to control limitations
Solution Approach 1:
The patent implements dynamic control by enabling the switching element to operate in different modes (IGBT mode, MOSFET mode, FRD mode) based on real-time operating status. The dual power supply structure allows dynamic adjustment of voltage levels and control strategies, enabling the system to switch between integration modes optimally. This dynamic adaptability converts the statically integrated structure into a dynamically controllable system, thereby improving conversion efficiency while maintaining low total loss.
Solution Approach 2:
The patent changes key operating parameters by independently controlling the first power supply voltage (collector) and second power supply voltage (drain). By adjusting these voltage parameters dynamically based on load conditions and operating status, the system can optimize the operating point of the switching element, achieving better conversion efficiency while maintaining the low loss characteristics provided by chip integration.
3Device complexity
If a single power supply manner is used, then device structure is simplified, but control manner cannot be improved for accurate mode control
Solution Approach 1:
The patent segments the power supply system into two independent power supplies with separate control channels. This segmentation provides an additional control degree of freedom, allowing the control chip to independently manage the collector and drain regions. The increased control capability enables accurate switching between different operating modes (IGBT, MOSFET, FRD) without excessively complicating the overall device structure, as the segmentation is implemented at the control architecture level rather than requiring complex physical modifications.
Data Source
AI summary
An insulated gate bipolar transistor (IGBT), a motor control unit, and a vehicle are disclosed. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer and an RC-IGBT device structure feature layer are respectively arranged on two sides of an SJ device structure feature layer. The RC-IGBT device structure feature layer includes a collector and a drain that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode laminated with and electrically connected to the collector, and a second metal electrode laminated with and electrically connected to the drain, and the first metal electrode is electrically isolated from the second metal electrode.